ACE1H004B datasheet(4/11 Pages) ACE

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ACE1H004B

40V Complementary Enhancement Mode MOSFET

VER 1.2

P-Channel Electrical Characteristics

TA=25℃, unless otherwise specified.

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Static

Drain-Source Breakdown

Voltage

(BR)DSS

GS = 0V, ID= -250μA

-40

Zero Gate Voltage Drain Current

DSS

DS = -40V, VGS = 0V

-1

μA

Gate Threshold Voltage

GS(TH)

GS = VDS, IDS= -250μA

-1

-1.6

-3

Gate Leakage Current

GSS

VGS=±20V, VDS=0V

±100

Drain-Source On-state

Resistance

DS(on)

GS = -10V, ID = -7A

mΩ

GS = -4.5V, ID = -4A

Diode Forward Voltage

ISD= -1A , VGS=0V

-0.78

-1.2

Diode Forward Current*AB

TA =25°C

-2.6

Switching

Total Gate Charge

VGS=-10V,VDS=-20V,

ID=-5A

Gate-Source Charge

2.5

Gate-Drain Charge

3.5

Turn-on Delay Time

d ( on )

VDD=-20V,ID=-5V,

VGS=-10V, RGEN=3

Turn-on Rise Time

Turn-off Delay Time

d( off )

Turn-Off Fall Time

Reverse Recovery Time

trr

ISD= 6A, dlSD

/dt = 100 A/μs

Reverse Recovery Charge

Qrr

Dynamic

Input Capacitance

Ciss

VDS=-20V,VGS=0V,

f=1.0MHz

1125

Output Capacitance

Coss

150

Reverse Transfer Capacitance

Crss

100

A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air

environment with TA=25°C. The value in any given application depends on the user's specific board design.

: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.

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