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US1AH Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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US1AH Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 6 page ![]() US1AH – US1MH Taiwan Semiconductor 2 Version: A2102 THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-lead thermal resistance RӨJL 27 °C/W Junction-to-ambient thermal resistance RӨJA 75 °C/W ELECTRICAL SPECIFICATIONS (T A = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL TYP MAX UNIT Forward voltage (1) US1AH US1BH US1DH US1GH IF = 1A, TJ = 25°C VF - 1.0 V US1JH US1KH US1MH - 1.7 V Reverse current @ rated VR (2) TJ = 25°C IR - 5 µA TJ = 125°C - 150 µA Junction capacitance US1AH US1BH US1DH US1GH 1MHz, VR = 4.0V CJ 15 - pF US1JH US1KH US1MH 10 - pF Reverse recovery time US1AH US1BH US1DH US1GH IF = 0.5A, IR = 1.0A, Irr = 0.25A trr - 50 ns US1JH US1KH US1MH - 75 ns Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1) PACKAGE PACKING US1xH DO-214AC (SMA) 7,500 / Tape & Reel Notes: 1. “x” defines voltage from 50V(US1AH) to 1000V(US1MH) |
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