Custom MMIC

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Assembly Guidelines

Assembly Diagram

ver 1.4 0218

Applications Information

The backside of the CMD201 is RF ground. Die attach should be accomplished with electrically and

thermally conductive epoxy only. Eutectic attach is not recommended. Standard assembly procedures

should be followed for high frequency devices. The top surface of the semiconductor should be made

planar to the adjacent RF transmission lines, and the RF decoupling capacitors placed in close proximity

to the DC connections on chip.

RF connections should be made as short as possible to reduce the inductive effect of the bond wire. Use

of a 0.8 mil thermosonic wedge bonding is highly recommended as the loop height will be minimized.

The RF input and output require a double bond wire as shown.

The semiconductor is 85 um thick and should be handled by the sides of the die or with a custom collet.

Do not make contact directly with the die surface as this will damage the monolithic circuitry. Handle

with care.

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions

should be observed during handling, assembly and test.

DC-20 GHz Distributed Power Amplifier

0.1 uF CAP TO GROUND

To Vgg1

0.1 uF CAP TO GROUND

100 pF CAP TO GROUND

100 pF BYPASS CAP

0.1 uF BYPASS CAP

100 pF CAP TO GROUND

0.1 uF BYPASS CAP

100 pF BYPASS CAP

To Vgg2

To Vdd

RF out

RF in

(example: Presidio part

MVB4080X104ZGK5R3L)

(example: Presidio part

LSA1515B101M2H5R-L)