WSF3055 datasheet(6/10 Pages) WIINSOK

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P Channel Electrical Characteristics (T= 25°C unless otherwise noted)

Min.

Typ.

Max.

BVDSS Drain-Source Breakdown Voltage

-30

-1

TJ=85°C

-30

VGS( th) Gate Threshold Voltage

-1.3

-1.8

-2.3

IGSS

Gate Leakage Current

±100

-11

mΩ

-15

mΩ

VSD

Diode Forward Voltage

-0.75

-1

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

Gate Resistance

Ω

Ciss

Input Capacitance

750

975

Coss

Output Capacitance

142

Crss

Reverse Transfer Capacitance

102

td(ON)

Turn-on Delay Time

Turn-on Rise Time

td( OFF) Turn-off Delay Time

Turn-off Fall Time

Total Gate Charge

Qgth

Threshold Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

Note e：Guaranteed by design, not subject to production testing.

VDS=-15V, VGS=-4.5V, IDS=-

7.0A

-8

Total Gate Charge

VDS=-15V, VGS=-10V, IDS=-

7.0A

VDS=-24V,

VGS=0V

Note d：Pulse test ; pulse width　≤300μs, duty cycle≤2%.

VGS=0V, VDS=-15V,

Frequency=1.0MHz

VDD=-15V, RL=15 , I

=-1A,

VGEN =-10V, RG =6　

Gate Charge Characteristics e

Diode Characteristics

ISD=-1A, VGS=0V

ISD=-7.0A,

dlSD/dt=100A/μs

Dynamic Characteristics e

VGS=0V,VDS=0V,f=1MHz

VDS=VGS, IDS=-250μA

VGS=±20V, VDS=0V

RDS(ON)

d Drain-Source On-state

Resistance

VGS=-10V, IDS=-7A

VGS=-4.5V, IDS=-4A

Static Characteristics

VGS=0V, IDS=-250μA

IDSS

Zero Gate Voltage Drain Current

Symbol Parameter

Test Conditions

P Channel

Unit

WSF3055

N-Ch and P-Channel MOSFET

Page 6

www.winsok.tw

Rev1.0 May.2020

WSF3055 Datasheet(PDF) 6 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

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