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WSF30150 Datasheet(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

Part # WSF30150
Description  Battery protection, Load switch
PDF  5 Pages
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Manufacturer  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
Direct Link  http://www.winsok.tw/index.html
Logo WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WSF30150 Datasheet(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

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Electrical Characteristics (TJ=25
℃, unless otherwise noted)
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
30
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25
℃ , ID=1mA
---
0.021
---
V/
℃
VGS=10V , ID=30A
---
2.3
4
VGS=4.5V , ID=15A
---
4.3
6
VGS(th)
Gate Threshold Voltage
1.2
1.6
2.5
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
-5.73
---
mV/
℃
VDS=24V , VGS=0V , TJ=25
℃
---
---
1
VDS=24V , VGS=0V , TJ=55
℃
---
---
5
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±100
nA
gfs
Forward Transconductance
VDS=5V , ID=30A
---
26.5
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
1.4
---
Ω
Qg
Total Gate Charge (4.5V)
---
70
---
Qgs
Gate-Source Charge
---
12
---
Qgd
Gate-Drain Charge
---
17
---
Td(on)
Turn-On Delay Time
---
11
---
Tr
Rise Time
---
120
---
Td(off)
Turn-Off Delay Time
---
25
---
Tf
Fall Time
---
60
---
Ciss
Input Capacitance
---
3500
---
Coss
Output Capacitance
---
386
---
Crss
Reverse Transfer Capacitance
---
358
---
IS
Continuous Source Current1,5
---
---
90
A
ISM
Pulsed Source Current2,5
---
---
360
A
VSD
Diode Forward Voltage2
VGS=0V , IS=1A , TJ=25
℃
---
---
1.2
V
Note :
1 .The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=53.8A
4 .The power dissipation is limited by 175℃ junction temperature
5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
VG=VD=0V , Force Current
VDS=15V , VGS=4.5V , ID=15A
nC
VDD=15V , VGS=10V , RG=3.3
Ω
ID=15A
ns
VDS=15V , VGS=0V , f=1MHz
pF
RDS(ON)
Static Drain-Source On-Resistance
m
Ω
VGS=VDS , ID =250uA
IDSS
Drain-Source Leakage Current
uA
WSF30150
N-Ch MOSFET
Page 2
www.winsok.tw
Rev 2: May.2019



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