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QPA1013DEVBP01 Datasheet(PDF) 13 Page - Qorvo, Inc |
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QPA1013DEVBP01 Datasheet(HTML) 13 Page - Qorvo, Inc |
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13 / 15 page ![]() QPA1013D 6–18 GHz 10 W GaN Power Amplifier Data Sheet Rev C, September 2019 | Subject to change without notice 13 of 15 www.qorvo.com ® Mechanical Drawing & Bond Pad Description Unit: millimeters Thickness: 0.10 Die x, y size tolerance: +/- 0.050 Chip edge to bond pad dimensions are shown to center of pad Ground is backside of die Bond Pad Symbol Pad Size Description 1 RF In 0.115 x 0.190 RF Input; matched to 50 Ω; DC shorted to ground 2, 12 VG12 0.090 x 0.090 Gate voltage 1-2, bias network is required; see Application Circuit on page 11 as an example. 3, 11 VD1 0.190 x 0.090 Drain voltage 1, bias network is required; see Application Circuit on page 11 as an example 4, 10 VD2 0.235 x 0.090 Drain voltage 2, bias network is required; see Application Circuit on page 11 as an example. 5, 9 VG3 0.090 x 0.090 Gate voltage 3, bias network is required; see Application Circuit on page 11 as an example. 6, 8 VD3 0.508 x 0.090 Drain voltage 3, bias network is required; see Application Circuit on page 11 as an example. 7 RF Out 0.115 x 0.190 RF Output; matched to 50 Ω; DC shorted to ground |
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