QPA1013DEVBP01 datasheet(2/15 Pages) QORVO

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QPA1013D

6–18 GHz 10 W GaN Power Amplifier

Data Sheet Rev C, September 2019 | Subject to change without notice

2 of 15

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Absolute Maximum Ratings

Parameter

Value/Range

Drain Voltage (VD)

29.5 V

Gate Voltage Range (VG)

−8 to 0 V

Drain Current (ID1)

480 mA

Drain Current (ID2)

720 mA

Drain Current (ID3)

2880 mA

Gate Currents (IG1/IG2 /IG3)

See plot on page 3

Power Dissipation (PDISS), 85 °C, CW

75 W

Input Power (PIN),

50 Ω, VD = 20 V,

IDQ = 1250 mA, 85 °C, CW

28 dBm

Input Power (PIN), VSWR 3:1, VD = 20 V,

IDQ = 1250 mA, 85 °C, CW

28 dBm

Mounting Temperature (30 seconds)

320 °C

Storage Temperature

-55 to 150 °C

Operation of this device outside the parameter ranges given

above may cause permanent damage. These are stress ratings

only, and functional operation of the device at these conditions

is not implied.

Recommended Operating Conditions

Parameter

Value/Range

Drain Voltage (VD)

20 V

Drain Current (IDQ)

1250 mA (Total)

Gate Voltage Range (VG)

−2.8 to −2.0 V

Electrical specifications are measured at specified test

conditions. Specifications are not guaranteed over all operating

conditions.

Electrical Specifications

Test conditions unless otherwise noted: 25 °C , VD = 20 V, IDQ = 1250 mA

Parameter

Min

Typical

Max

Units

Operational Frequency Range

GHz

Small Signal Gain

>25

Input Return Loss

>6.5

Output Return Loss

Power Gain (PIN = 20 dBm)

>20

Output Power (PIN = 20 dBm)

>40

dBm

Power Added Efficiency (PIN = 20 dBm)

Gate Leakage (VD = 10 V, VG =

−6.0 V)

−19.6

−0.0001

Small Signal Gain Temperature Coefficient

−0.061

dB/°C

Output Power Temperature Coefficient

(Calculated from 25 °C to 85 °C) (Pin = 20 dBm)

−0.017

dBm/°C

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