QPM1021

10 – 12 GHz 100 W GaN Power Amplifier

Data Sheet Rev. A, March 2019 | Subject to change without notice

2 of 16

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Absolute Maximum Ratings

Parameter

Rating

29.5 V

−5 to 0 V

18.2 A

See plot pg. 11

PW = 150 us, DC = 20%

435 Watts

Pulsed; PW = 150 us, DC = 20%

32 dBm

28 V, Pulsed; PW = 150 us, DC = 20%

38 dBm

Lead Soldering Temperature (30 seconds)

260 °C

Storage Temperature

-55 to 150 °C

Exceeding any one or a combination of the Absolute Maximum Rating

conditions may cause permanent damage to the device. Extended

application of Absolute Maximum Rating conditions to the device may

reduce device reliability.

Recommended Operating Conditions

Parameter

Min

Typ

Max

Units

28

V

2.0

A

Operating Temperature

Range

−40

25

85

 °C

Electrical specifications are measured at specified test conditions.

Specifications are not guaranteed over all recommended operating

conditions.

Electrical Specifications

Parameter

Conditions

Min

Typ

Max

Units

Frequency Range

10

12

GHz

Output Power

10 GHz

11 GHz

12 GHz

51.3

50.5

50.4

dBm

Power Added Efficiency

10 GHz

11 GHz

12 GHz

32.9

31.0

26.2

%

Power Gain

10 GHz

11 GHz

12 GHz

23.4

22.6

22.5

dB

–0.012

dB/°C

Small Signal Gain

10 GHz

11 GHz

12 GHz

26.6

24.0

20.2

dB

Input Return Loss

13

dB

Output Return Loss

11

dB

Small Sig. Gain Temp. Coefficient

Temp:

–40°C to 85 °C

-0.110

dB/°C

Recommended Operating Voltage

24

28

28

V

Notes:

1.