LTC3336 datasheet(4/22 Pages) AD

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LTC3336

Rev. 0

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PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

IPEAK (Inductor Peak Current)

10mA IPEAK Setting, ISW Rising

8.7

30mA IPEAK Setting, ISW Rising

100mA IPEAK Setting, ISW Rising

100

130

300mA IPEAK Setting, ISW Rising

260

300

390

IVALLEY (Inductor Valley Current)

10mA IPEAK Setting, ISW Falling

30mA IPEAK Setting, ISW Falling

100mA IPEAK Setting, ISW Falling

300mA IPEAK Setting, ISW Falling

270

Deliverable Output Current

10mA IPEAK Setting

8.3

30mA IPEAK Setting

100mA IPEAK Setting

300mA IPEAK Setting

250

IZERO

Inductor Current Going into Sleep, as a

Percentage of IPEAK

P-Channel MOSFET Switch

On-Resistance

10mA IPEAK Setting

30mA IPEAK Setting

5.3

100mA IPEAK Setting

1.6

300mA IPEAK Setting

0.53

N-Channel MOSFET Switch

On-Resistance

10mA IPEAK Setting, 5V VOUT Setting

9.6

30mA IPEAK Setting, 5V VOUT Setting

3.2

100mA IPEAK Setting, 5V VOUT Setting

0.96

300mA IPEAK Setting, 5V VOUT Setting

0.32

P-Channel MOSFET Switch Leakage

N-Channel MOSFET Switch Leakage

INTVCC Voltage

VOUT Settings < 2.4V, 0 ≤ I(INTVCC) ≤ 10µA

1.9

2.2

VOUT Settings ≥ 2.4V, 0 ≤ I(INTVCC) ≤ 10µA

VOUT

VUVLO Undervoltage Lockout

VIN Rising

1.95

2.2

VIN Falling

1.5

1.75

VIH Digital Input High Voltage

Pins IPK[1:0], OUT[3:0]

INTVCC – 0.15V

VIL Digital Input Low Voltage

Pins IPK[1:0], OUT[3:0]

0.15

ELECTRICAL CHARACTERISTICS The

denotes the specifications which apply over the specified operating

junction temperature range, otherwise specifications are at TA = 25°C (Note 2). VIN = 7.2V unless otherwise noted.

Note 1: Stresses beyond those listed under Absolute Maximum Ratings

may cause permanent damage to the device. Exposure to any Absolute

Maximum Rating condition for extended periods may affect device

reliability and lifetime.

Note 2: The LTC3336 is tested under pulsed load conditions such that

TJ ≈ TA. The specifications over the –40°C to125°C operating junction

temperature range are assured by design, characterization, and correlation

with statistical process controls. Note that the maximum ambient

temperature consistent with these specifications is determined by specific

operating conditions in conjunction with board layout, the rated package

thermal impedance, and other environmental factors.

Note 3: TJ is calculated from the ambient TA and power dissipation

PD according to the following formula: TJ = TA + (PD • θJA).

Note 4: Dynamic supply current is higher due to gate charge being

delivered at the switching frequency.

Note 5: The falling threshold is specified as a percentage of the average

of the measured sleep and wake-up thresholds for each selected output

voltage and the rising threshold is equal to the sleep threshold.

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