LTC3335 datasheet(8/22 Pages) AD

8 / 22 page

LTC3336

Rev. 0

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RDS(ON) of P-Channel MOSFET

vs VIN

RDS(ON) of P-Channel MOSFET

vs VIN

RDS(ON) of N-Channel MOSFET

vs VOUT

RDS(ON) of N-Channel MOSFET

vs VOUT

RDS(ON) of N-Channel MOSFET

vs VOUT

RDS(ON) of N-Channel MOSFET

vs VOUT

RDS(ON) vs Temperature

Output Voltage Ripple

30mA IPEAK SETTING

VIN (V)

2.5

7.5

12.5

DS(ON)

3336 G28

10mA IPEAK SETTING

VIN (V)

2.5

7.5

12.5

DS(ON)

3336 G29

1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 4.8 5.2

300mA IPEAK SETTING

VOUT (V)

0.1

0.2

0.3

0.4

0.5

0.6

DS(ON)

OUT

3336 G30

1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 4.8 5.2

100mA IPEAK SETTING

VOUT (V)

0.3

0.6

0.9

1.2

1.5

1.8

DS(ON)

OUT

3336 G31

1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 4.8 5.2

30mA IPEAK SETTING

VOUT (V)

DS(ON)

OUT

3336 G32

1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 4.8 5.2

10mA IPEAK SETTING

VOUT (V)

DS(ON)

OUT

3336 G33

300mA IPEAK SETTING

PMOS AT VIN = 3.6V

NMOS AT VOUT = 3.6V

TEMPERATURE (°C)

–40

125

0.2

0.4

0.6

0.8

1.0

1.2

3336 G34

50µs/DIV

VOUT

100mV/DIV

100mA/DIV

3336 G35

L = 68µH, VIN = 7.2V

COUT = 100µF

300mA IPEAK SETTING

ILOAD = 250mA

2.5V VOUT SETTING

TYPICAL PERFORMANCE CHARACTERISTICS T

A = 25°C, unless otherwise noted.

LTC3335 Datasheet(PDF) 8 Page - Analog Devices

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