Transistors with built-in Resistor

1

Publication date: December 2003

SJH00018DED

Silicon PNP epitaxial planar type

For digital circuits

■ Features

• Costs can be reduced through downsizing of the equipment and

reduction of the number of parts

• New S type package, allowing supply with the radial taping

■ Resistance by Part Number

• UNR4110 (UN4110)

47 k

Ω

• UNR4111 (UN4111)

10 k

Ω

10 k

Ω

• UNR4112 (UN4112)

22 k

Ω

22 k

Ω

• UNR4113 (UN4113)

47 k

Ω

47 k

Ω

• UNR4114 (UN4114)

10 k

Ω

47 k

Ω

• UNR4115 (UN4115)

10 k

Ω

• UNR4116 (UN4116)

4.7 k

Ω

• UNR4117 (UN4117)

22 k

Ω

• UNR4118 (UN4118)

0.51 k

Ω

5.1 k

Ω

• UNR4119 (UN4119)

1 k

Ω

10 k

Ω

• UNR411D (UN411D)

47 k

Ω

10 k

Ω

• UNR411E (UN411E)

47 k

Ω

22 k

Ω

• UNR411F (UN411F)

4.7 k

Ω

10 k

Ω

• UNR411H (UN411H)

2.2 k

Ω

10 k

Ω

• UNR411L (UN411L)

4.7 k

Ω

4.7 k

Ω

• UNR411M

2.2 k

Ω

47 k

Ω

• UNR411N

4.7 k

Ω

47 k

Ω

■ Absolute Maximum Ratings T

a

= 25°C

B

C

E

Internal Connection

Unit: mm

1: Emitter

2: Collector

3: Base

NS-B1 Package

Note) The part numbers in the parenthesis show conventional part number.

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

−50

V

Collector-emitter voltage (Base open)

−50

V

Collector current

−100

mA

Total power dissipation

300

mW

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

0.75 max.

0.45

(2.5) (2.5)

23

1

+0.20

–0.10

0.45

+0.20

–0.10