UNR4113 datasheet(2/15 Pages) PANASONIC

2 / 15 page

UNR411x Series

SJH00018DED

■ Electrical Characteristics T

a = 25°C ± 3°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

VCBO

IC = −10 µA, IE = 0

−50

Collector-emitter voltage (Base open)

VCEO

IC = −2 mA, IB = 0

−50

Collector-base cutoff current (Emitter open)

ICBO

VCB

= −50 V, I

= 0

− 0.1

µA

Collector-emitter cutoff current (Base open)

ICEO

VCE = −50 V, IB = 0

− 0.5

µA

Emitter-base

UNR4110/4115/4116/4117

IEBO

VEB = −6 V, IC = 0

− 0.01

cutoff current UNR4113

− 0.1

(Collector open) UNR4112/4114/411D/

− 0.2

411E/411M/411N

UNR4111

− 0.5

UNR411F/411H

−1.0

UNR4119

−1.5

UNR4118/411L

−2.0

Forward current UNR4118/411L

hFE

VCE = −10 V, IC = −5 mA



transfer ratio

UNR4119/411D/411F/411H

UNR4111

UNR4112/411E

UNR4113/4114/411M

UNR411N

400

UNR4110 */4115 */4116 */

160

460

4117 *

Collector-emitter saturation voltage

VCE(sat)

IC = −10 mA, IB = − 0.3 mA

− 0.25

Output voltage high-level

VOH

VCC

= −5 V, V

= − 0.5 V, R

= 1 kΩ−4.9

Output voltage low-level

VOL

VCC = −5 V, VB = −2.5 V, RL = 1 kΩ− 0.2

UNR4113

VCC = −5 V, VB = −3.5 V, RL = 1 kΩ

UNR411D

VCC

= −5 V, V

= −10 V, R

= 1 kΩ

UNR411E

VCC = −5 V, VB = −6 V, RL = 1 kΩ

Transition frequency

VCB = −10 V, IE = 1 mA, f = 200 MHz

MHz

Input resistance UNR4118

−30%

0.51

+30%

Ω

UNR4119

1.0

UNR411H/411M

2.2

UNR4116/411F/411L/411N

4.7

UNR4111/4114/4115

UNR4112/4117

UNR4110/4113/411D/411E

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

Rank

No-rank

hFE

160 to 260

210 to 340

290 to 460

160 to 460

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