IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

IXYS reserves the right to change limits, test conditions, and dimensions.

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

V

DS

= 10 V; I

30

40

S

C

iss

5200

pF

C

oss

V

GS

= 0 V, V

880

pF

C

rss

260

pF

t

d(on)

38

ns

t

r

V

GS

= 10 V, V

V

ns

t

d(off)

I

I

85

ns

t

f

26

ns

Q

g(on)

155

nC

Q

gs

V

GS

= 10 V, V

V

38

nC

Q

gd

Notes 2

55

nC

R

thJC

0.90

K/W

R

thCK

0.30

K/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

min.

typ.

max.

I

S

V

60

A

I

SM

Repetitive; pulse width limited by T

JM

240

A

V

SD

I

1.5

V

Note 1

t

rr

250

ns

Q

RM

0.7

µC

I

RM

8A

I

-di/dt = 100 A/

µs,

V

Note: All terminals are solder plated.

1 - Gate

2 - Drain

3 - Source

ISOPLUS220 OUTLINE

Note: 1. Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

2. I

IXFC 60N20