IXFC60N20 datasheet(1/2 Pages) IXYS

Part #	IXFC60N20

Description	HiPerFET MOSFET ISOPLUS220TM

PDF	2 Pages

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 2 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

200

V

DGR

T

J

= 25

°C to 150°C; R

GS = 1 MΩ

200

V

GS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C

= 25

°C60

A

I

DM

T

C

= 25

°C, pulse width limited by T

JM

240

A

I

AR

T

C

= 25

°C60

A

E

AR

T

C

= 25

°C30

mJ

E

AS

T

C

= 25

°C

1.0

J

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,

5

V/ns

T

J

≤ 150°C, R

G = 2 Ω

P

D

T

C

= 25

°C

230

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.062 in.) from case for 10 s

300

°C

Weight

3g

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

V

DSS

V

GS = 0 V, ID = 250 µA

200

V

GS(th)

V

DS = VGS, ID = 4 mA

2

4

V

I

GSS

V

GS

=

±20 V

DC, VDS = 0

±100

nA

I

DSS

V

DS = VDSS

T

J = 25°C25

µA

V

GS = 0 V

T

J = 125°C1

mA

R

DS(on)

V

GS = 10 V, ID = IT

33 m

Ω

Notes 1, 2

N-Channel Enhancement Mode

High dv/dt, Low t

rr, HDMOS

TM Family

G = Gate,

D = Drain,

S = Source

* Patent pending

HiPerFETTM MOSFET

IXFC 60N20

V

DSS

= 200 V

ISOPLUS220TM

I

D25

= 60 A

Electrically Isolated Back Surface

R

DS(on)

= 33 m

Ω

t

rr

≤≤≤≤≤ 250 ns

98843 (6/01)

G

D

S

ADVANCE TECHNICAL INFORMATION

ISOPLUS 220TM

Features

l Silicon chip on Direct-Copper-Bond

substrate

- High power dissipation

-Isolatedmountingsurface

-2500Velectricalisolation

l Lowdraintotabcapacitance(<35pF)

l Low R

DS (on)

l Ruggedpolysilicongatecellstructure

l UnclampedInductiveSwitching(UIS)

rated

l FastintrinsicRectifier

Applications

l DC-DC converters

l Batterychargers

l Switched-modeandresonant-mode

power supplies

l DC choppers

l ACmotorcontrol

Advantages

l Easyassembly:noscrewsorisolation

foilsrequired

l Space savings

l High power density

l Lowcollectorcapacitancetoground

(low EMI)

Isolated back surface*

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