P1306ED datasheet(2/4 Pages) NIKOSEM

2 / 4 page

REV1.0

K-28-4

P-Channel Enhancement Mode

Field Effect Transistor

P1306ED

TO-252

Halogen-Free & Lead-Free

NIKO-SEM

Zero Gate Voltage Drain Current

IDSS

VDS = -60V, VGS = 0V

-1

A

VDS = -60V, VGS = 0V, TJ = 55 °C

-10

Drain-Source On-State

Resistance

RDS(ON)

VGS = -4.5V, ID = -15A

14.3

17.5

mΩ

VGS = -10V, ID = -20A

10.8

13.5

Forward Transconductance

gfs

VDS = -5V, ID = -20A

DYNAMIC

Input Capacitance

Ciss

VGS = 0V, VDS = -25V, f = 1MHz

4037

Output Capacitance

Coss

396

Reverse Transfer Capacitance

Crss

284

Gate Resistance

VGS =0V, VDS = 0V, f = 1MHz

2.8

Total Gate Charge

Qg (VGS=-10V)

VDS = -30V , VGS = -10V,

ID = -20A

Qg(VGS=-4.5V)

Gate-Source Charge

Qgs

11.5

Gate-Drain Charge

Qgd

20.5

Turn-On Delay Time

td(on)

VDS = -30V ,

ID  -20A, VGS = -10V, RGEN =6Ω

Rise Time

Turn-Off Delay Time

td(off)

123

Fall Time

112

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

Continuous Current

-48

Forward Voltage

VSD

IF = -20A, VGS = 0V

-1.2

Reverse Recovery Time

trr

IF = -20A, dlF/dt = 100A / S

Reverse Recovery Charge

Qrr

1Pulse test : Pulse Width

 300 sec, Duty Cycle  2%.

2Independent of operating temperature

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