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IRK.430 Datasheet(PDF) 2 Page - International Rectifier

Part # IRK.430
Description  SUPER MAGN-A-pak-TM Power Modules
PDF  8 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRK.430 Datasheet(HTML) 2 Page - International Rectifier

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IRK.430.. Series
2
Bulletin I27400 rev. A 09/97
www.irf.com
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
V
RRM
/V
DRM
, maximum repetitive
V
RSM
, maximum non-
I
RRM
/I
DRM
max.
Type number
Code
peak reverse voltage
repetitive peak rev. voltage
@ T
J = TJ max.
VV
mA
16
1600
1700
IRK.430..
18
1800
1900
100
20
2000
2100
I
T(AV)
Maximum average on-state current
430
A
180° conduction, half sine wave
I
F(AV)
@ Case temperature
82
°C
I
T(RMS)
Maximum RMS on-state current
675
A
180° conduction, half sine wave @ T
C = 82°C
I
TSM
Maximum peak, one-cycle,
15.7
KA
t = 10ms
No voltage
I
FSM
non-repetitive surge current
16.4
t = 8.3ms
reapplied
13.2
t = 10ms
100% V
RRM
13.8
t = 8.3ms
reapplied
Sinusoidal half wave,
I2t
Maximum I2t for fusing
1232
KA2s
t = 10ms
No voltage
Initial T
J
= T
J
max.
1125
t = 8.3ms
reapplied
871
t = 10ms
100% V
RRM
795
t = 8.3ms
reapplied
I2
√t
Maximum I2
√t for fusing
12320
KA2
√s t = 0.1 to 10ms, no voltage reapplied
VT(TO)1 Low level value of threshold voltage
0.96
V
(16.7% x
π x I
T(AV)
< I <
π x I
T(AV)
), T
J
= T
J
max.
VT(TO)2 High level value of threshold voltage
1.06
(I >
π x I
T(AV)), TJ = TJ max.
rt1
Low level value of on-state slope resistance
0.51
m
Ω
(16.7% x
π x I
T(AV) < I < π x IT(AV) ), TJ = TJ max.
rt2
High level value of on-state slope resistance
0.45
(I >
π x I
T(AV)), TJ = TJ max.
V
TM
Maximum on-state or forward
1.65
V
I
pk
= 1500A, T
J = 25°C, t p
= 10ms sine pulse
V
FM
voltage drop
I
H
Maximum holding current
500
mA
T
J
= 25°C, anode supply 12V resistive load
I
L
Typical latching current
1000
Parameter
IRK.430..
Units Conditions
On-state Conduction
di/dt
Maximum rate of rise of turned-on
1000
A/µs
T
J = TJ max., ITM = 400A, VDRM applied
current
t
d
Typical delay time
2.0
µs
Gate current 1A, di
g
/dt = 1A/µs
V
d
= 0.67% V
DRM , TJ = 25°C
t
q
Typical turn-off time
200
µs
I
TM
= 750A, T
J
= T
J
max, di/dt = -60A/µs,
V
R
= 50V, dv/dt = 20V/µs, Gate 0 V 100
Ω
Parameter
IRK.430..
Units Conditions
Switching



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