IRK.430 datasheet(3/8 Pages) IRF

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IRK.430.. Series

Bulletin I27400 rev. A 09/97

www.irf.com

Max. junction operating temperature range

- 40 to 130

°C

Tstg

Max. storage temperature range

- 40 to 150

thJC

Max. thermal resistance, junction to

0.065

K/W

Per junction, DC operation

case

RthC-hs Max. thermal resistance, case to

0.02

K/W

heatsink

Mounting torque ± 10% SMAP to heatsink

6 - 8

busbar to SMAP

12 - 15

Approximate weight

1500

Case style

SUPER MAGN-A-pak

See outline table

dv/dt

Maximum critical rate of rise of off-state

1000

V/µs

J = 130°C., linear to VD = 80% VDRM

voltage

INS

RMS isolation voltage

3000

t = 1 s

RRM

Maximum peak reverse and off-state

100

= T

max., rated V

DRM

RRM

applied

DRM

leakage current

Parameter

IRK.430..

Units Conditions

Blocking

Parameter

IRK.430..

Units Conditions

Triggering

Maximum peak gate power

J = TJ max., tp < 5ms

G(AV)

Maximum peak average gate power

2.0

J = TJ max., f = 50Hz, d% = 50

+ I

Maximum peak positive gate current

3.0

= T

max., tp < 5ms

+ V

Maximum peak positive gate voltage

- V

Maximum peak negative gate voltage

5.0

Max. DC gate current required to trigger

200

= 25°C

12V

DC gate voltage required to trigger

3.0

= 25°C

12V

DC gate current not to trigger

= T

max.

DC gate voltage not to trigger

0.25

Parameter

IRK.430..

Units Conditions

Thermal and Mechanical Specifications

A mounting compound is recommended and the

torque should be rechecked after a period of 3 hours

to allow for the spread of the compound

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