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LTC4281 Datasheet(PDF) 3 Page - Analog Devices |
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LTC4281 Datasheet(HTML) 3 Page - Analog Devices |
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3 / 32 page  LTC4238 3 Rev. 0 For more information www.analog.com ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. VDD = 48V unless otherwise noted. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS Power Supply VDD Input Supply Range l 6.5 80 V IDD Input Supply Current l 3 5 mA VDD(UVLO) Input Supply Undervoltage Lockout VDD Rising l 5.8 6 6.2 V VDD(HYST) Input Supply Undervoltage Lockout Hysteresis l 500 mV INTVCC Internal 5V Supply Voltage ILOAD = 0mA to 10mA l 4.5 5.0 5.5 V INTVCC(UVLO) INTVCC Undervoltage Lockout Threshold INTVCC Rising l 3.75 4 4.25 V INTVCC(HYST) INTVCC Undervoltage Lockout Hysteresis l 110 mV Current Limit ΔVSNS(TH) Current Limit Sense Voltage Threshold (SENSE+ – SENSE–) ISET= 0V ISET = INTVCC l l 5.8 19.5 6 20 6.2 20.5 mV mV 10% Current Limit Foldback, Start-Up Only ISET = 0V ISET = INTVCC l l 0.18 1.6 0.6 2 0.9 2.4 mV mV 30% Current Limit Foldback, Normal VDD – VDSFB =12V ISET = 0V ISET = INTVCC l l 1.5 5.6 1.8 6 2.1 6.4 mV mV Current Limit Threshold DAC INL l 0 ±60 µV ΔVSNS1 – ΔVSNS2 Current Limit Channel Voltage Mismatch VSENSE1+, VSENSE2+ = 48V l 0 ±300 µV αILIM(FAST) Ratio of Fast Current Limit to Nominal ΔVSNS(TH) l 2 3 4 ISENSE1+ SENSE1+ Input Current VSENSE1+ = 48V, VSNS1 ≤ 20mV l 0 150 µA ISENSE1– SENSE1– Input Current, VSENSE1– = VSENSE2– = 48V HSSS Mode with CH2 Off l 3 5 7 µA Parallel, LSSS Mode, HSSS Mode with CH2 On l 0 ±1 µA ISENSE2+ SENSE2+ Input Current VSENSE2+ = 48V l 0 70 µA ISENSE2– SENSE2– Input Current VSENSE2+ = VSENSE2– = 48V l 0 ±1 µA Gate Drive ΔVGATE External N-Channel Gate Drive (VGATE –VSOURCE) VDD = 6.5V to 80V, IGATE = –5μA (Note 3) l 10 12 14 V ΔVGATE(TH) Gate Threshold for FET-Bad and Power Good l 6 8 10 V IGATE(UP) GATE1, GATE2 Pull-Up Current Gate On, GATE = 0V l –35 –50 –70 µA IGATE(DN) GATE1, GATE2 Fast Pull-Down Current ΔVSNS = 100mV, ΔVGATE = 6V 0.8 A Gate Off Pull-Down Current to SOURCE ΔVGATE = 6V l 6 10 16 mA Gate Off Pull-Down Current to Ground ΔVGATE = 6V l 0.5 1.5 2.5 mA tPHL(SENSE) ΔVSNS High to GATE Low Propagation Delay ΔVSNS = 0mV to 100mV Step, C = 10nF l 0.5 1 µs tPHL(GATE) UV, OV Turn Off Propagation Delay GATE < 6V, Gate Open l 0.3 1 3 µs tPHL(STRESS) Propagation Delay to Turn Off Low Stress MOSFET in HSSS Mode Gate Open l 6 13 µs Comparator Inputs VTH UV, OV, FB Threshold Voltage Rising l 2.5 2.56 2.62 V ΔVUV(HYST) UV Hysteresis l 280 360 440 mV ΔVOV(HYST) OV Hysteresis l 25 46 85 mV ΔVFB(HYST) FB Power Good Hysteresis l 60 80 100 mV VTH UV Reset Threshold Voltage Falling l 0.95 1.00 1.05 V ΔVUVR(HYST) UV Reset Threshold Hysteresis l 50 100 150 mV IINPUT UV, OV, FB Input Current V = 2.56V l 0 ±1 μA |
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