L8550QLT1 datasheet(1/3 Pages) LRC

Part #	L8550QLT1

Description	General Purpose Transistors PNP Silicon

PDF	3 Pages

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Manufacturer	LRC [Leshan Radio Company]

Direct Link	http://www.lrc.cn/

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LESHAN RADIO COMPANY, LTD.

L8550*LT1–1/3

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

V CEO

25

V

Collector-Base voltage

V CBO

40

V

Emitter-base Voltage

V EBO

5

V

Collector current-continuoun

I C

800

mAdc

THERMALCHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR- 5 Board (1)

P D

T A = 2

5 °C

225

mW

Derate above 2

5 °C

1.8

mW /°C

Thermal Resistance, Junction to Ambient

RθJA

556

°C/W

Total Device Dissipation

P D

Alumina Substrate, (2) T A = 2

5 °C

300

mW

Derate above 2

5 °C

2.4

mW /°C

Thermal Resistance, Junction to Ambient

RθJA

417

°C/W

Junction and Storage Temperature

T J , T stg

-55 to +150

°C

DEVICEMARKING

L8550QLT1 = 1YD L8550PLT1=85P

ELECTRICAL CHARACTERISTICS (T A = 2

5 °C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFFCHARACTERISTICS

Collector-Emitter Breakdown Voltage

V (BR)CEO

25

–

V

(I C = 1.0mA)

Emitter-Base Breakdown Voltage

V (BR)EBO

5–

–

V

(I E = 100

µA)

Collector-Base Breakdown voltage

V (BR)CBO

40

–

V

(I C= 100

µA)

Collector Cutoff Current

I CBO

–

150

nA

(VCB = 35 V)

Emitter Cutoff Current

I EBO

–

150

nA

(VEB =4V)

1. FR-5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

SOT– 23

L8550*LT1

1

3

2

General Purpose Transistors

1

BASE

2

EMITTER

COLLECTOR

3

FEATURE

Pb-Free Package is available.

ORDERING INFORMATION

Device

Package

Shipping

L8550*LT1

SOT-23

3000/Tape&Reel

L8550*LT1G

(Pb-Free)

SOT-23

3000/Tape&Reel

PNP Silicon

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