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HA22012 Datasheet(PDF) 6 Page - Hitachi Semiconductor |
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HA22012 Datasheet(HTML) 6 Page - Hitachi Semiconductor |
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6 / 12 page ![]() HA22012 6 Main Characteristics 20 15 10 5 0 1.0 1.5 2.0 2.5 Frequency f (GHz) Power Gain vs. Frequency Vdd = 3 V Ta = +25 °C Frequency f (GHz) 4 3 2 1 0 Noise Figure vs. Frequency 1.0 1.5 2.0 2.5 Frequency f (GHz) 6 5 4 3 2 1 Vdd = 3 V Ta = +25 °C Vdd = 3 V Ta = +25 °C output input VSWR vs. Frequency 20 0 –20 –40 –60 –80 –60 –50 –40 –30 –20 –10 0 10 Input Power Pin (dBm) Output Power, 3rd Order Intermodulation Distortion vs. Input Power Vdd = 3 V f = 1.9 GHz ud = 19006 GHz Ta = +25 °C Pout im3 1.0 1.5 2.0 2.5 |
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