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HA22012 Datasheet(PDF) 2 Page - Hitachi Semiconductor |
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HA22012 Datasheet(HTML) 2 Page - Hitachi Semiconductor |
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2 / 12 page ![]() HA22012 2 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Ratings Unit Supply voltage Vdd 5 V Maximum current Idd 6 mA Power dissipation Pd 100 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Operation temperature Topr –20 to +70 °C Electrical Characteristics (Ta = 25 °C, Vdd = 3V) Item Symbol Min Typ Max Unit Test Conditions Pin Quiescent current Idd 1.5 3 5.5 mA No signal Power gain PG 11.5 13.5 16 dB f = 1.9 GHz Noise figure NF — 1.9 2.5 dB f = 1.9 GHz Typical Performance (Ta = 25 °C, Vdd = 3V) Item Symbol Typ Unit Test Conditions Pin VSWR (input) VSWR in 1.6 — f = 1.9 GHz 4 VSWR (output) VSWR out 1.6 — f = 1.9 GHz 1 3rd order intermodulation distortion IM3 58 dB f = 1.9 GHz, UD = 1.9006 Ghz Pin = –30 dBm |
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