AOU408 datasheet(1/5 Pages) AOSMD

Part #	AOU408

Description	N-Channel Enhancement Mode Field Effect Transistor

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	AOSMD [Alpha & Omega Semiconductors]

Direct Link	http://www.aosmd.com

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1 / 5 page

Symbol

VDS

VGS

IDM

IAR

EAR

TJ, TSTG

Symbol

Typ

Max

RθJA

65

80

RθJC

1

1.5

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Maximum

Units

Drain-Source Voltage

105

V

Gate-Source Voltage

±25

V

A

TC=100°C

28

Pulsed Drain Current

C

100

Continuous Drain

Current

TC=25°C

ID

40

Avalanche Current

C

20

A

Repetitive avalanche energy L=0.1mH

C

200

mJ

W

TC=100°C

50

Junction and Storage Temperature Range

-55 to 175

°C

Power Dissipation

B

TC=25°C

PD

100

Maximum Junction-to-Case

B

Steady-State

°C/W

Thermal Characteristics

Parameter

Units

Maximum Junction-to-Ambient

A

Steady-State

°C/W

AOU408

N-Channel Enhancement Mode Field Effect Transistor

Features

VDS (V) = 105V

ID = 40 A (VGS =10V)

RDS(ON) < 28 mΩ (VGS =10V) @ 20A

RDS(ON) < 31 mΩ (VGS = 6V)

General Description

The AOU408 uses advanced trench technology and

design to provide excellent RDS(ON) with low gate

charge. This device is suitable for use in high voltage

synchronous rectification , load switching and general

purpose applications. Standard Product AOU408 is Pb-

free (meets ROHS & Sony 259 specifications).

AOU408L is a Green Product ordering option.

AOU408 and AOU408L are electrically identical.

G

D

S

Top View

Drain Connected

to Tab

TO-251

G

D S

Alpha & Omega Semiconductor, Ltd.

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AOU408 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors

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