AOU408 datasheet(2/5 Pages) AOSMD

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AOU408

Symbol

Min

Typ

Max

Units

BVDSS

105

TJ=55°C

IGSS

100

VGS(th)

2.5

3.2

ID(ON)

100

21.5

TJ=125°C

Ω

gFS

VSD

0.73

Ciss

2038

2445

Coss

204

Crss

1.3

1.56

Ω

Qg(10V)

38.5

Qgs

8nC

Qgd

tD(on)

12.7

8.2

tD(off)

31.5

11.2

trr

59.6

Qrr

161

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE

Electrical Characteristics (TJ=25°C unless otherwise noted)

Parameter

Conditions

STATIC PARAMETERS

Drain-Source Breakdown Voltage

ID=10mA, VGS=0V

IDSS

Zero Gate Voltage Drain Current

VDS=84V, VGS=0V

µA

Gate-Body leakage current

VDS=0V, VGS=±25V

Gate Threshold Voltage

VDS=VGS, ID=250µA

On state drain current

VGS=10V, VDS=5V

RDS(ON)

Static Drain-Source On-Resistance

VGS=10V, ID=20A

Ω

VGS=6V, ID=20A

Forward Transconductance

VDS=5V, ID=20A

Diode Forward Voltage

IS=1A, VGS=0V

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

Input Capacitance

VGS=0V, VDS=25V, f=1MHz

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

VGS=0V, VDS=0V, f=1MHz

SWITCHING PARAMETERS

Total Gate Charge

VGS=10V, VDS=50V, ID=20A

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

VGS=10V, VDS=50V, RL=2.7Ω,

RGEN=3Ω

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

IF=20A, dI/dt=100A/µs

Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs

A: The value of R θJA is measured with the device in a still air environment with T A =25°C.

B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.

D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming

a maximum junction temperature of TJ(MAX)=175°C.

G. The maximum current rating is limited by bond-wires.

Rev2: August 2005

Alpha & Omega Semiconductor, Ltd.

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