AOB403

Symbol

Min

Typ

Max

Units

-60

V

-0.003

-1

-5

±100

nA

-1

-1.9

-3

V

-60

A

36

44

51

62

43

55

mΩ

50

S

-0.73

-1

V

-30

A

2977

3600

pF

241

pF

153

pF

2

2.4

Ω

44.6

54

nC

20.8

25

nC

9.9

nC

10

nC

13.7

ns

8.3

ns

37

ns

9.7

ns

40

48

ns

56

nC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Body Diode Reverse Recovery Time

Drain-Source Breakdown Voltage

On state drain current

Reverse Transfer Capacitance

STATIC PARAMETERS

Parameter

Conditions

µ

A

Gate Threshold Voltage

Zero Gate Voltage Drain Current

Gate-Body leakage current

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

mΩ

Turn-On Rise Time

Turn-Off DelayTime

Gate resistance

Turn-Off Fall Time

SWITCHING PARAMETERS

Total Gate Charge (4.5V)

Gate Source Charge

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

Turn-On DelayTime

DYNAMIC PARAMETERS

Gate Drain Charge

Total Gate Charge (10V)

Power dissipation PDSM is based on R qJA and the maximum allowed junction temperature of 150°C. The value in any given application

depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.

B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.

D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming

a maximum junction temperature of TJ(MAX)=175°C.

G. The maximum current rating is limited by bond-wires.

H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA

curve provides a single pulse rating.

Rev1:May2005

Alpha & Omega Semiconductor, Ltd.