AOB418 datasheet(2/5 Pages) AOSMD

2 / 5 page

AOB418

Symbol

Min

Typ

Max

Units

BVDSS

TJ=55°C

IGSS

100

VGS(th)

1.5

ID(ON)

4.9

TJ=125°C

8.4

10.5

5.9

7.2

Ω

gFS

103

VSD

0.73

110

Ciss

2100

Coss

536

Crss

165

0.95

Ω

Qg(4.5V)

19.6

Qgs

3.6

Qgd

8nC

tD(on)

5.9

15.9

tD(off)

trr

32.5

Qrr

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

IF=30A, dI/dt=100A/µs

Drain-Source Breakdown Voltage

On state drain current

ID=250µA, VGS=0V

VGS=10V, VDS=5V

VGS=10V, ID=30A

Reverse Transfer Capacitance

IF=30A, dI/dt=100A/µs

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

IDSS

µA

Gate Threshold Voltage

VDS=VGS ID=250µA

VDS=24V, VGS=0V

VDS=0V, VGS= ±12V

Zero Gate Voltage Drain Current

Gate-Body leakage current

RDS(ON)

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

DYNAMIC PARAMETERS

Ω

VGS=4.5V, ID=30A

IS=1A,VGS=0V

VDS=5V, ID=30A

Turn-On Rise Time

Turn-Off DelayTime

VGS=10V, VDS=15V, RL=0.5Ω,

RGEN=3Ω

Turn-Off Fall Time

Turn-On DelayTime

Gate Drain Charge

VGS=0V, VDS=15V, f=1MHz

SWITCHING PARAMETERS

Total Gate Charge

Gate Source Charge

Gate resistance

VGS=0V, VDS=0V, f=1MHz

VGS=4.5V, VDS=15V, ID=30A

A: The value of RθJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C. The Power

dissipation PDSM is based on steady-state RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends

on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB or heatsink allows it.

B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation

limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.

C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.

D. The R θJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

F. These tests are performed with the device mounted on 1 in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C. The SOA curve

provides a single pulse rating.

G. The maximum current rating is limited by the package current capability.

Rev3: August 2005

Alpha & Omega Semiconductor, Ltd.

AOB418 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors

AOB418 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors

Html Pages

1 2 3 4 5

Datasheet Download

Link URL