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VP2106 Datasheet(PDF) 5 Page - Microchip Technology

Part # VP2106
Description  P-Channel Enhancement-Mode Vertical DMOS FET
PDF  14 Pages
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Manufacturer  MICROCHIP [Microchip Technology]
Direct Link  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

VP2106 Datasheet(HTML) 5 Page - Microchip Technology

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2021 Microchip Technology Inc. and its subsidiaries
DS20006007A-page 5
VP2106
FIGURE 2-7:
BVDSS Variation with
Temperature.
FIGURE 2-8:
Transfer Characteristics.
FIGURE 2-9:
Capacitance vs.
Drain-to-Source Voltage.
FIGURE 2-10:
On-Resistance vs. Drain
Current.
FIGURE 2-11:
V(th) and RDS Variation with
Temperature.
FIGURE 2-12:
Gate Drive Dynamic
Characteristics.
-50
0
50
100
150
-1.1
-1.0
-0.9
T
j (
OC)
0
-2.0
-4.0
-6.0
-8.0
-10
-1.0
-0.8
-0.6
-0.4
-0.2
0
V
GS (volts)
V
DS = -25V
T
A = -55
OC
25OC
125OC
100
75
50
25
0
0
-10
-20
-30
-40
f = 1.0MHz
C
ISS
C
OSS
C
RSS
V
DS (volts)
20
16
12
8.0
6.0
4.0
2.0
0
0
-0.2
-0.4
-0.6
-0.8
-1.0
I
D (amperes)
V
GS = -5.0V
V
GS = -10V
1.4
1.2
1.0
0.8
0.6
-50
0
50
100
150
2.0
1.6
1.2
0.8
0.4
0
V
(th) @ 1.0mA
R
DS(ON) @ -10V. 0.5A
T
j (
OC)
-10
-8.0
-6.0
-4.0
-2.0
0
0
1.0
2.0
35 pF
101 pF
Q
G (nanocoulombs)
V
DS = -10V
V
DS = -40V



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