AO6702 datasheet(2/5 Pages) AOSMD

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AO6702

Symbol

Min

Typ

Max

Units

BVDSS

TJ=55°C

IGSS

100

VGS(th)

0.4

0.6

ID(ON)

41.6

TJ=125°C

Ω

gFS

10.5

VSD

0.8

1.8

Ciss

449

Coss

Crss

51.6

4.9

Ω

5.9

Qgs

0.36

Qgd

1.3

tD(on)

4.5

6ns

tD(off)

32.7

7.1

trr

Qrr

3.3

SCHOTTKY PARAMETERS

0.39

0.5

0.02

trr

5.2

Qrr

0.8

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

SchottkyReverse Recovery Time

IF=1A, dI/dt=100A/µs

Schottky Reverse Recovery Charge

IF=1A, dI/dt=100A/µs

IF=3.8A, dI/dt=100A/µs

Electrical Characteristics (T J=25°C unless otherwise noted)

Parameter

Conditions

STATIC PARAMETERS

Drain-Source Breakdown Voltage

ID=250µA, VGS=0V

IDSS

Zero Gate Voltage Drain Current

VDS=16V, VGS=0V

µA

Gate-Body leakage current

VDS=0V, VGS=±8V

RDS(ON)

Static Drain-Source On-Resistance

Gate Threshold Voltage

VDS=VGS ID=250µA

On state drain current

VGS=4.5V, VDS=5V

VGS=4.5V, ID=3.8A

Ω

VGS=2.5V, ID=3.3A

VGS=1.8V, ID=2.8A

Forward Transconductance

VDS=5V, ID=3.8A

Input Capacitance

VGS=5V, VDS=10V, RL=2.6Ω,

RGEN=0Ω

Gate Drain Charge

Output Capacitance

Turn-On Rise Time

Turn-Off DelayTime

Reverse Transfer Capacitance

Diode Forward Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Turn-Off Fall Time

Total Gate Charge

Gate Source Charge

Turn-On DelayTime

Forward Voltage Drop

IF=0.5A

Irm

Maximum reverse leakage current

VR=16V

VR=16V, TJ=125°C

Junction Capacitance

VR=10V

IS=1A,VGS=0V

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

VGS=4.5V, VDS=10V, ID=3.8A

VGS=0V, VDS=10V, f=1MHz

Gate resistance

VGS=0V, VDS=0V, f=1MHz

SWITCHING PARAMETERS

A: The value of RθJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C. The value

in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.

D. The static characteristics in Figures 1 to 6 are obtained using 80

µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C. The SOA

curve provides a single pulse rating.

Rev3: August 2005

Alpha & Omega Semiconductor, Ltd.

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