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NDS352AP Datasheet(PDF) 3 Page - ON Semiconductor |
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NDS352AP Datasheet(HTML) 3 Page - ON Semiconductor |
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3 / 9 page ![]() NDS352AP www.onsemi.com 3 ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise noted. Symbol Parameter Test Conditions Min Typ Max Unit OFF CHARACTERISTICS BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = −250 mA −30 − − V IDSS Zero Gate Voltage Drain Current VDS = −24 V, VGS = 0 V − − −1 mA VDS = −24 V, VGS = 0 V, TJ = 125°C − − −10 IGSSF Gate–Body Leakage, Forward VGS = −20 V, VDS = 0 V − − −100 nA IGSSR Gate–Body Leakage, Reverse VGS = 20 V, VDS = 0 V − − 100 nA ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = −250 mA −0.8 −1.7 −2.5 V VDS = VGS, ID = −250 mA, TJ = 125°C −0.5 −1.4 −2.2 RDS(on) Static Drain–Source On–Resistance VGS = −4.5 V, ID = −0.9 A − 0.45 0.5 W VGS = −4.5 V, ID = −0.9 A, TJ = 125°C − 0.65 0.7 VGS = −10 V, ID = −1 A − 0.25 0.3 ID(on) On–State Drain Current VGS = −4.5 V, VDS = −5 V −2 − − A gFS Forward Transconductance VDS = −5 V, ID = −0.9 A − 1.9 − S DYNAMIC CHARACTERISTICS Ciss Input Capacitance VDS = −15 V, VGS = 0 V, f = 1.0 MHz − 135 − pF Coss Output Capacitance − 88 − pF Crss Reverse Transfer Capacitance − 40 − pF SWITCHING CHARACTERISTICS (Note 2) td(on) Turn–On Delay Time VDD = −6 V, ID = −1 A, VGS = −4.5 V, RGEN = 6 W − 5 10 ns tr Turn–On Rise Time − 17 30 ns td(off) Turn–Off Delay Time − 35 70 ns tf Turn–Off Fall Time − 30 60 ns td(on) Turn–On Delay Time VDD = −10 V, ID = −1 A, VGS = −10 V, RGEN = 50 W − 8 15 ns tr Turn–On Rise Time − 16 30 ns td(off) Turn–Off Delay Time − 35 90 ns tf Turn–Off Fall Time − 30 90 ns Qg Total Gate Charge VDS = −10 V, ID = −0.9 A, VGS = −4.5 V − 2 3 nC Qgs Gate–Source Charge − 0.5 − nC Qgd Gate–Drain Charge − 1 − nC DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Source Current − − −0.42 A ISM Maximum Pulsed Drain−Source Diode Forward Current − − −10 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = −0.42 A (Note 2) − −0.8 −1.2 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. |
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