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NDS352AP Datasheet(PDF) 3 Page - ON Semiconductor

Part # NDS352AP
Description  P-Channel Logic Level Enhancement Mode Field Effect Transistor
PDF  9 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NDS352AP Datasheet(HTML) 3 Page - ON Semiconductor

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NDS352AP
www.onsemi.com
3
ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V, ID = −250 mA
−30
−
−
V
IDSS
Zero Gate Voltage Drain Current
VDS = −24 V, VGS = 0 V
−
−
−1
mA
VDS = −24 V, VGS = 0 V, TJ = 125°C
−
−
−10
IGSSF
Gate–Body Leakage, Forward
VGS = −20 V, VDS = 0 V
−
−
−100
nA
IGSSR
Gate–Body Leakage, Reverse
VGS = 20 V, VDS = 0 V
−
−
100
nA
ON CHARACTERISTICS (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = −250 mA
−0.8
−1.7
−2.5
V
VDS = VGS, ID = −250 mA, TJ = 125°C
−0.5
−1.4
−2.2
RDS(on)
Static Drain–Source On–Resistance
VGS = −4.5 V, ID = −0.9 A
−
0.45
0.5
W
VGS = −4.5 V, ID = −0.9 A, TJ = 125°C
−
0.65
0.7
VGS = −10 V, ID = −1 A
−
0.25
0.3
ID(on)
On–State Drain Current
VGS = −4.5 V, VDS = −5 V
−2
−
−
A
gFS
Forward Transconductance
VDS = −5 V, ID = −0.9 A
−
1.9
−
S
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
VDS = −15 V, VGS = 0 V, f = 1.0 MHz
−
135
−
pF
Coss
Output Capacitance
−
88
−
pF
Crss
Reverse Transfer Capacitance
−
40
−
pF
SWITCHING CHARACTERISTICS (Note 2)
td(on)
Turn–On Delay Time
VDD = −6 V, ID = −1 A,
VGS = −4.5 V, RGEN = 6 W
−
5
10
ns
tr
Turn–On Rise Time
−
17
30
ns
td(off)
Turn–Off Delay Time
−
35
70
ns
tf
Turn–Off Fall Time
−
30
60
ns
td(on)
Turn–On Delay Time
VDD = −10 V, ID = −1 A,
VGS = −10 V, RGEN = 50 W
−
8
15
ns
tr
Turn–On Rise Time
−
16
30
ns
td(off)
Turn–Off Delay Time
−
35
90
ns
tf
Turn–Off Fall Time
−
30
90
ns
Qg
Total Gate Charge
VDS = −10 V, ID = −0.9 A,
VGS = −4.5 V
−
2
3
nC
Qgs
Gate–Source Charge
−
0.5
−
nC
Qgd
Gate–Drain Charge
−
1
−
nC
DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Maximum Continuous Source Current
−
−
−0.42
A
ISM
Maximum Pulsed Drain−Source Diode Forward Current
−
−
−10
A
VSD
Drain–Source Diode Forward Voltage VGS = 0 V, IS = −0.42 A (Note 2)
−
−0.8
−1.2
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.



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