POWER SUPPLY REQUIREMENTS

+Vcc

-Vcc

PWM

Free Running Frequency

CONTROL

Transconductance

Current Monitor

HALL INPUTS

Low Level Input Voltage

High Level Input Voltage

ERROR AMP

Input Voltage Range

Slew Rate

Output Voltage Swing

Gain Bandwidth Product

Large Signal Voltage Gain

75V

±13.5V

+16V

-18V

10A

20A

High Voltage Supply

Current Command Input

Continuous Output Current

Peak Output Current

@ +15V

@ -15V

±8 Amps Output

±8 Amps Output

mA

mA

KHz

Amp/Volt

V/Amp

mAmp

mAmp

Volts

Volts

Volts

V/µSec

Volts

MHz

V/mV

ABSOLUTE MAXIMUM RATINGS

V+

+Vcc

-Vcc

3.1°C/W

-65°C to +150°C

+300°C

-55°C to +125°C

+150°C

Parameter

ELECTRICAL SPECIFICATIONS

Units

Max.

85

35

28

2.2

0.55

±35.0

-

0.8

-

-

-

-

-

-

MSK 4363

Typ.

60

16

25

2

0.5

±5.0

-

-

-

±12

8

±13

6.5

275

Test Conditions

Min.

-

-

22

1.8

0.45

-

-

-

3.0

±11

6.5

±12

-

175

Thermal Resistance

Storage Temperature Range

Lead Temperature Range

(10 Seconds)

Case Operating Temperature

Junction Temperature

All Ratings: Tc=+25°C Unless Otherwise Specified

2

Rev. G 8/01

Max.

85

35

26.5

2.1

0.55

±25.0

±50.0

0.8

-

-

-

-

-

-

MSK 4363H

Typ.

60

16

25

2

0.5

±5.0

-

-

-

±12

8

±13

6.5

275

Min.

-

-

23.5

1.9

0.45

-

-

-

3.0

±11

6.5

±12

-

175

1,2,3

1,2,3

4,5,6

4,5,6

4,5,6

4

5,6

-

-

-

-

-

-

-

NOTES:

1

Guaranteed by design but not tested. Typical parameters are representative of actual device

performance but are for reference only.

2

Industrial grade devices shall be tested to subgroups 1 and 4 unless otherwise specified.

3

Military grade devices ("H" Suffix) shall be 100% tested to Subgroups 1, 2, 3 and 4.

4

Subgroups 5 and 6 testing available upon request.

5

6

This is to be used for MOSFET thermal calculation only.

7

Measurements do not include offset current at 0V current command.

3

2

nSec

nSec

µAmps

Volts

Volts

Ω

Volts

nSec

µSec

OUTPUT

Rise Time

Fall Time

Leakage Current

Voltage Drop Across Bridge (1 Upper and 1 Lower)

Voltage Drop Across Bridge (1 Upper and 1 Lower)

Drain-Source On Resistance (Each MOSFET)

Diode VSD

trr

Dead Time

@ 64V, +150°C Junction

@ 10 Amps

@10Amps, +150°C Junction

@ 10 Amps, 150°C Junction

@ 10 Amps, Each FET

IF=10 Amps, di/dt=100A/µS

-

-

750

0.3

0.6

0.026

2.6

-

-

100

100

-

-

-

-

-

280

2

-

-

-

-

-

-

-

-

-

100

100

-

-

-

-

-

280

2

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

750

0.3

0.6

0.026

2.6

-

-

7

Group A

5

Subgroup

4

7

6

1

1

1

1

1

1

1

1

1

1

1

1

1

1

@ 0 Volts Command

Output Offset

1