2SC2712 datasheet(2/5 Pages) AITSEMI

2 / 5 page

AiT Semiconductor Inc.

www.ait-ic.com

2SC2712

GENERAL PURPOSE TRANSISTOR

NPN 150mW 150mA 50V

REV1.0

- AUG 2017 RELEASED -

- 2 -

ABSOLUTE MAXIMUM RATINGS

VCBO, Collector-Base Voltage(IE=0)

60V

VCEO, Collector-Emitter Voltage(IB=0)

50V

VEBO, Emitter-Base Voltage(IC=0)

IC, Collector Current-Continuous

150mA

PC, Collector Dissipation(TA =25°C)NOTE1

150mW

TJ, TSTG, Junction and Storage Temperature

-55°C ~150°C

Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at

these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

NOTE1: Device is mounted on a printed circuit board.

ELECTRICAL CHARACTERISTICS

TA=25°C, unless otherwise specified

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Collector-Base Breakdown Voltage

V(BR)CBO

IC=100μA, IE=0

Collector-Emitter Breakdown Voltage

V(BR)CEO

IC= 0.1mA, IB=0

Emitter-Base Breakdown Voltage

V(BR)EBO

IE=100μA,IC=0

Collector Cut-off Current

ICBO

VCB=60V, IE=0

0.1

Emitter Cut-off Current

IEBO

VEB=5V, IC=0

0.1

DC Current Gain

hFE

VCE=6V, IC=2mA

140

120

240

200

400

350

700

Collector-Emitter Saturation Voltage

VCE(sat)

IC=100mA, IB=10mA

0.1

0.25

Transition Frequency

VCE=10V, IC=1mA

MHz

Output Capacitance

Cob

VCB=10V, IE=0,

f=1kHz

2.0

3.5

Noise Figure

VCE=6V, IC=0.1mA,

f=1kHz

1.0

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