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QPD1003 Datasheet(PDF) 2 Page - Qorvo, Inc

Part # QPD1003
Description  500W, 50V, 1.2 ??1.4 GHz, GaN RF IMFET
PDF  18 Pages
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Manufacturer  QORVO [Qorvo, Inc]
Direct Link  https://www.qorvo.com/
Logo QORVO - Qorvo, Inc

QPD1003 Datasheet(HTML) 2 Page - Qorvo, Inc

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QPD1003
500W, 50V, 1.2
– 1.4 GHz, GaN RF IMFET
Datasheet Rev. E, June 14, 2019 | Subject to change without notice
- 2 of 18 -
www.qorvo.com
Absolute Maximum Ratings1
Parameter
Rating
Units
Breakdown Voltage,BVDG
+145
V
Gate Voltage Range, VG
-7 to +2
V
Drain Current, IDMAX
20
A
Gate Current Range, IG
See page 4.
mA
Power Dissipation, 10% DC
1 mS PW, PDISS
410
W
RF Input Power, 10% DC
1 mS PW, 1.3 GHz, T = 25
 °C
+42
dBm
Mounting Temperature
(30 Seconds)
320 
°C
Storage Temperature
−65 to +150
°C
Notes:
1.
Operation of this device outside the parameter ranges
given above may cause permanent damage.
Recommended Operating Conditions1
Parameter
Min
Typ
Max Units
Operating Temp. Range
−40
+25
+85
 °C
Drain Voltage Range, VD
+28
+50
+55
V
Drain Bias Current, IDQ
–
750
–
mA
Drain Current, ID
–
15
–
A
Gate Voltage, VG4
–
−2.8
–
V
Power Dissipation, Pulsed
(PD)2, 3
–
–
370
W
Notes:
1. Electrical performance is measured under conditions noted
in the electrical specifications table. Specifications are not
guaranteed over all recommended operating conditions.
2. Package base at 85 °C
3. Pulse Width = 1 mS, Duty Cycle = 10%
4. To be adjusted to desired IDQ
Pulsed Characterization
– Load-Pull Performance – Power Tuned1
Parameters
Typical Values
Unit
Frequency, F
1.2
1.3
1.4
GHz
Linear Gain, GLIN
19
19.9
18.6
dB
Output Power at 3dB
compression point, P3dB
57.3
57.3
57
dBm
Power-Added-Efficiency at 3dB
compression point, PAE3dB
55.1
57.6
56.9
%
Gain at 3dB compression point
16
16.9
15.6
dB
Notes:
1. Test conditions unless otherwise noted: VD = +50
 V, IDQ = 750 mA, Temp = +25 °C
Pulsed Characterization
– Load-Pull Performance – Efficiency Tuned1
Parameters
Typical Values
Unit
Frequency, F
1.2
1.3
1.4
GHz
Linear Gain, GLIN
20.3
20.6
19.4
dB
Output Power at 3dB
compression point, P3dB
55.4
55.6
55.3
dBm
Power-Added-Efficiency at 3dB
compression point, PAE3dB
70.3
66.7
67.4
%
Gain at 3dB compression point,
G3dB
17.3
17.6
16.4
dB
Notes:
1.
Test conditions unless otherwise noted: VD = +50
 V, IDQ = 750 mA, Temp = +25 °C



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