AMC1350 datasheet(9/37 Pages) TI

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6.9 Electrical Characteristics (continued)

minimum and maximum specifications apply from TA = –40°C to +125°C, VDD1 = 3.0 V to 5.5 V, VDD2 = 3.0 V to 5.5 V, INP

= –5 V to +5 V, and INN = GND1 (unless otherwise noted); typical specifications are at TA = 25°C, VDD1 = 5 V, and VDD2 =

3.3 V

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Output short-circuit current

On OUTP or OUTN, sourcing or sinking,

INN = INP = GND1, outputs shorted to

either GND or VDD2

CMTI

Common-mode transient immunity

100

150

kV/µs

POWER SUPPLY

VDD1UV

VDD1 undervoltage detection

threshold

VDD1 rising

2.5

2.7

2.9

VDD1 falling

2.4

2.6

2.8

VDD2UV

VDD2 undervoltage detection

threshold

VDD2 rising

2.2

2.45

2.65

VDD2 falling

1.85

2.0

2.2

IDD1

High-side supply current

3.0 V < VDD1 < 3.6 V

6.0

8.1

4.5 V < VDD1 < 5.5 V

7.0

9.3

IDD2

Low-side supply current

3.0 V < VDD2 < 3.6 V

5.3

7.2

4.5 V < VDD2 < 5.5 V

5.9

8.1

(1)

The typical value includes one standard deviation (sigma) at nominal operating conditions.

(2)

This parameter is input referred.

(3)

The typical value is at VDD1 = 3.3 V.

(4)

THD is the ratio of the rms sum of the amplitues of first five higher harmonics to the amplitude of the fundamental.

(5)

Offset error temperature drift is calculated using the box method, as described by the following equation:

TCVOS = (VOS,MAX - VOS,MIN) / TempRange where VOS,MAX and VOS,MIN refer to the maximum and minimum VOS values measured

within the temperature range (–40 to 125

℃).

(6)

Gain error temperature drift is calculated using the box method, as described by the following equation:

TCEG (ppm) = ((EG,MAX - EG,MIN) / TempRange) x 104 where EG,MAX and EG,MIN refer to the maximum and minimum EG values (in %)

measured within the temperature range (–40 to 125

℃).

(7)

Value is below measurement capability.

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AMC1350-Q1

SBASAB0 – DECEMBER 2021

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