SPC58ECX datasheet(24/153 Pages) STMICROELECTRONICS

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Electrical characteristics

SPC584Cx, SPC58ECx

24/153

DS11620 Rev 8

IDDSTBY8

Total standby mode

current on VDD_LV and

VDD_HV supply, 8 KB

RAM(11)

TJ = 25 °C

—

160

µA

CTJ = 40 °C

—

250

DTJ = 55 °C

—

370

DTJ = 120 °C

—

1.2

2.2

PTJ = 150 °C

—

2.9

5.0

IDDSTBY32

Total standby mode

current on VDD_LV and

VDD_HV supply, 32 KB

RAM(11)

TJ = 25 °C

—

100

180

µA

CTJ = 40 °C

—

270

DTJ = 55 °C

—

410

DTJ = 120 °C

—

2.4

PTJ = 150 °C

—

5.5

IDDSTBY256

Total standby mode

current on VDD_LV and

VDD_HV supply,

256 KB RAM(11)

TJ = 25 °C

—

150

250

µA

CTJ = 40 °C

—

390

DTJ = 55 °C

—

590

DTJ = 120 °C

—

2.0

3.5

PTJ = 150 °C

—

5.1

IDDSSWU1

SSWU running over all

STANDBY period with

OPC/TU commands

execution and keeping

ADC off(12)

TJ =40 °C

—

1.0

3.5

IDDSSWU2

SSWU running over all

STANDBY period with

OPC/TU/ADC

commands execution

and keeping ADC

on(13)

TJ =40 °C

—

3.5

5.0

1. The ranges in this table are design targets and actual data may vary in the given range.

2. The leakage considered is the sum of core logic and RAM memories. The contribution of analog modules is not considered,

and they are computed in the dynamic IDD_LV and IDD_HV parameters.

3. IDD_LKG (leakage current) and IDD_LV (dynamic current) are reported as separate parameters, to give an indication of the

consumption contributors. The tests used in validation, characterization and production are verifying that the total

consumption (leakage+dynamic) is lower or equal to the sum of the maximum values provided (IDD_LKG +IDD_LV). The two

parameters, measured separately, may exceed the maximum reported for each, depending on the operative conditions and

the software profile used.

4. Use case: 2 x e200Z4 @180 MHz, HSM @90 MHz, all IPs clock enabled, Flash access with prefetch disabled, Flash

consumption includes parallel read and program/erase, all SARADC in continuous conversion, DMA continuously triggered

by ADC conversion, 4 DSPI / 8 CAN / 2 LINFlex and 2 DSPI transmitting, 2 x EMIOS running (8 channels in OPWMT

mode), FIRC, SIRC, FXOSC, PLL0-1 running. The switching activity estimated for dynamic consumption does not include

I/O toggling, which is highly dependent on the application. Details of the software configuration are available separately.

The total device consumption is IDD_LV + IDD_HV + IDD_LKG for the selected temperature.

5. Gateway use case: Two cores running at 160 MHz, DMA, PLL, FLASH read only 25%, 8xCAN, 1xEthernet, HSM,

2xSARADC.

6. BCM use case: One Core running at 160 MHz, no lockstep no, DMA, PLL, FLASH read only 25%, 2xCAN, HSM,

4xSARADC.

Table 9. Device consumption (continued)

Symbol

Parameter

Conditions

Value(1)

Unit

Min

Typ

Max

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