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STL52N60DM6 Datasheet(PDF) 5 Page - STMicroelectronics

Part # STL52N60DM6
Description  N-channel 600 V, 72 mΩ typ., 45 A, MDmesh DM6 Power MOSFET in a PowerFLAT 8x8 HV package
PDF  14 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STL52N60DM6 Datasheet(HTML) 5 Page - STMicroelectronics

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2.1
Electrical characteristics (curves)
Figure 1. Safe operating area
GADG070520210854SOA
102
101
100
10-1
10-2
10-3
10-1
100
101
102
ID
(A)
VDS (V)
tp =10 µs
tp =1 µs
tp =100 µs
tp =1 ms
IDM
V(BR)DSS
Operation
in
this
area
is limited
by
RDS(on)
RDS(on) max.
single pulse
TC = 25 °C
TJ ≤ 150 °C
tp =10 ms
Figure 2. Maximum transient thermal impedance
GADG070520210855ZTH
10-1
10-2
10-3
10-6
10-5
10-4
10-3
10-2
10-1 tp(s)
0.05
duty=0.5
3
2
4
Single pulse
ton
T
duty = ton / T
RthJC = 0.72 °C/W
ZthJC
(°C/W)
Figure 3. Typical output characteristics
GADG141220201039OCH
120
100
80
60
40
20
0
0
2
4
6
8
10 12 14 16
ID
(A)
VDS (V)
9V
8V
7V
6V
VGS=10V
Figure 4. Typical transfer characteristics
GADG141220201145TCH
120
100
80
60
40
20
0
0
2
4
6
8
10
ID
(A)
VGS (V)
VDS =18V
Figure 5. Typical gate charge characteristics
GADG141220201041QVG
500
400
300
200
100
0
10
8
6
4
2
0
0
10
20
30
40
50
VGS
(V)
VDS
(V)
Qg (nC)
Qgs
Qgd
Qg
VDS
VGS
VDD =480V, ID =40A
Figure 6. Typical drain-source on-resistance
GADG070520210903RID
76
74
72
70
68
0
10
20
30
40
RDS(on)
(mΩ)
ID (A)
VGS = 10 V
STL52N60DM6
Electrical characteristics (curves)
DS12975 - Rev 3
page 5/14



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