STL52N60DM6 datasheet(6/14 Pages) STMICROELECTRONICS

Part #	STL52N60DM6

Description	N-channel 600 V, 72 mΩ typ., 45 A, MDmesh DM6 Power MOSFET in a PowerFLAT 8x8 HV package

PDF	14 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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6 / 14 page

Figure 7. Typical capacitance characteristics

GADG100220211612CVR

10 4

10 3

10 2

10 1

10 0

10 -1

10 0

10 1

10 2

(pF)

VDS (V)

f = 1 MHz

Crss

Coss

Ciss

Figure 8. Normalized gate threshold vs temperature

GADG141220201044VTH

1.1

1.0

0.9

0.8

0.7

0.6

-75

-25

125

VGS(th)

(norm.)

Tj (°C)

ID =250µA

Figure 9. Normalized on-resistance vs temperature

GADG141220201045RON

2.5

2.0

1.5

1.0

0.5

0.0

-75

-25

125

RDS(on)

(norm.)

TJ (°C)

VGS=10V

Figure 10. Normalized breakdown voltage vs temperature

GADG141220201046BDV

1.10

1.05

1.00

0.95

0.90

0.85

-75

-25

125

V(BR)DSS

(norm.)

TJ (°C)

ID =1mA

Figure 11. Typical reverse diode forward characteristics

GADG140120211504SDF

1.1

1.0

0.9

0.8

0.7

0.6

0.5

VSD

(V)

ISD (A)

TJ =-50°C

TJ =25°C

TJ =150°C

Figure 12. Typical output capacitance stored energy

GADG140120211503EOS

100 200 300 400 500 600

EOSS

(μJ)

VDS (V)

STL52N60DM6

Electrical characteristics (curves)

DS12975 - Rev 3

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