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STW65N60DM6 Datasheet(PDF) 5 Page - STMicroelectronics

Part # STW65N60DM6
Description  N-channel 600 V, 60 mΩ typ., 46 A MDmesh DM6 Power MOSFETs in a TO-247 and TO-247 long leads packages
PDF  14 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STW65N60DM6 Datasheet(HTML) 5 Page - STMicroelectronics

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2.1
Electrical characteristics curves
Figure 1. Safe operating area
GADG250320211403SOA
10 2
10 1
10 0
10 -1
10 -1
10 0
10 1
10 2
ID
(A)
VDS (V)
tp =1 µs
tp =10 µs
tp =100 µs
tp =1 ms
tp =10 ms
RDS(on) max.
V(BR)DSS
single pulse
TJ≤150 °C
TC=25 °C
IDM
VGS=10 V
Figure 2. Maximum transient thermal impedance
GADG250320211419ZTH
10 -1
10 -2
10 -3
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1
tp (s)
0.3
0.1
0.05
0.4
duty=0.5
0.2
Single pulse
ton
T
duty = ton / T
RthJC = 0.34 °C/W
ZthJC
(°C/W)
Figure 3. Typical output characteristics
GIPD031020181119OCH
120
100
80
60
40
20
0
0
4
8
12
16
ID
(A)
VDS (V)
VGS =10V
VGS =9V
VGS =8V
VGS =7V
VGS =6V
Figure 4. Typical output characteristics
GIPD031020181119TCH
120
100
80
60
40
20
0
4
5
6
7
8
9
ID
(A)
VGS (V)
VDS = 20V
Figure 5. Typical drain-source on-resistance
GADG250320211420RID
66
64
62
60
58
56
54
0
6
12
18
24
30
36
42
RDS(on)
(mΩ)
ID (A)
VGS =10V
Figure 6. Typical gate charge characteristics
GADG220320211445QVG
600
500
400
300
200
100
0
12
10
8
6
4
2
0
0
10
20
30
40
50
60
70
VDS
(V)
Qg (nC)
Qgs
Qgd
Qg
VDD = 480 V, ID = 42 A
VGS
VDS
VGS
(V)
STW65N60DM6, STWA65N60DM6
Electrical characteristics curves
DS12314 - Rev 5
page 5/14



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