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STW65N60DM6 Datasheet(PDF) 6 Page - STMicroelectronics

Part # STW65N60DM6
Description  N-channel 600 V, 60 mΩ typ., 46 A MDmesh DM6 Power MOSFETs in a TO-247 and TO-247 long leads packages
PDF  14 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STW65N60DM6 Datasheet(HTML) 6 Page - STMicroelectronics

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Figure 7. Typical capacitance characteristics
GIPD031020181120CVR
10 4
10 3
10 2
10 1
10 0
10 -1
10 0
10 1
10 2
C
(pF)
VDS (V)
CISS
COSS
CRSS
f = 1 Mhz
Figure 8. Normalized gate threshold vs temperature
GIPD031020181121VTH
1.1
1.0
0.9
0.8
0.7
0.6
-75
-25
25
75
125
VGS(th)
(norm.)
Tj (°C)
ID = 250 µA
Figure 9. Normalized on resistance vs temperature
GIPD031020181122RON
2.5
2.0
1.5
1.0
0.5
0.0
-75
-25
25
75
125
RDS(on)
(norm.)
Tj (°C)
VGS = 10 V
Figure 10. Typical output capacitance stored energy
GIPD041020181405SDF
24
20
16
12
8
4
0
0
100 200 300 400 500 600
Eoss
(µJ)
VDS (V)
Figure 11. Normalized breakdown voltage vs temperature
GIPD031020181123BDV
1.10
1.05
1.00
0.95
0.90
0.85
-75
-25
25
75
125
V(BR)DSS
(norm.)
Tj (°C)
ID = 1 mA
Figure 12. Typical reverse diode forward characteristics
GADG220320211451SDF
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0
6
12
18
24
30
36
42
VSD
(V)
ISD (A)
TJ = -50°C
TJ = 150°C
TJ = 25°C
STW65N60DM6, STWA65N60DM6
Electrical characteristics curves
DS12314 - Rev 5
page 6/14



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