STWA70N65DM6 datasheet(4/12 Pages) STMICROELECTRONICS

Part #	STWA70N65DM6

Description	N-channel 650 V, 36 mΩ typ., 68 A MDmesh DM6 Power MOSFET in a TO-247 long leads package

PDF	12 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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4 / 12 page

Table 7. Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

ISDM (1)

Source-drain current (pulsed)

260

VSD (2)

Forward on voltage

VGS = 0 V, ISD = 68 A

1.6

trr

Reverse recovery time

ISD = 68 A, di/dt = 100 A/μs, VDD = 60 V

(see Figure 15. Test circuit for inductive

load switching and diode recovery times)

170

Qrr

Reverse recovery charge

1.08

µC

IRRM

Reverse recovery current

12.7

trr

Reverse recovery time

ISD = 68 A, di/dt = 100 A/μs,

VDD = 60 V, TJ = 150 °C

(see Figure 15. Test circuit for inductive

load switching and diode recovery times)

308

Qrr

Reverse recovery charge

4.16

µC

IRRM

Reverse recovery current

1. Pulse width is limited by safe operating area.

2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%.

STWA70N65DM6

Electrical characteristics

DS12313 - Rev 5

page 4/12

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