NXP Semiconductors

BGS8U5

SiGe:C low-noise amplifier with bypass switch for LTE/5G NR

[2]

Guaranteed by design; not tested in production

component values as in Table 13. Unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max Unit

Gain mode

f = 4400 MHz

-

13.0

-

dB

power gain

f = 5000 MHz

-

10.5

-

dB

f = 4400 MHz

[1] -

1.0

-

dB

NF

noise figure

f = 5000 MHz

[1] -

1.3

-

dB

f = 4400 MHz

-

-6.0

-

dBm

input power at 1 dB gain

compression

f = 5000 MHz

-

-5.0

-

dBm

f = 4400 MHz

-

5.0

-

dBm

output power

at 1 dB gain compression

f = 5000 MHz

-

4.5

-

dBm

f = 4400 MHz; Δf = 1 MHz/10 MHz

-

3.0

-

dBm

input third-order intercept point

f = 5000 MHz; Δf = 1 MHz/10 MHz

-

3.0

-

dBm

f = 4400 MHz

-

17.0

-

dB

input return loss

f = 5000 MHz

-

14.0

-

dB

f = 4400 MHz

-

15.0

-

dB

output return loss

f = 5000 MHz

-

10.0

-

dB

f = 4400 MHz

-

22.0

-

dB

ISL

isolation

f = 5000 MHz

-

22.0

-

dB

Table 11. Characteristics

BGS8U5

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© NXP B.V. 2021. All rights reserved.

Product data sheet

Rev. 5 — 1 December 2021

12 / 20