NXP Semiconductors

BGS8U5

SiGe:C low-noise amplifier with bypass switch for LTE/5G NR

component values as in Table 13. Unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max Unit

Bypass mode

f = 4400 MHz

-

-3.6

-

dB

power gain

f = 5000 MHz

-

-7.0

-

dB

f = 4400 MHz

-

3.6

-

dB

ISL

isolation

f = 5000 MHz

-

7.0

-

dB

f = 4400 MHz

-

7.0

-

dBm

input power at 1 dB gain

compression

f = 5000 MHz

-

6.0

-

dBm

f = 4400 MHz

-

22.0

-

dBm

input third-order intercept point

f = 5000 MHz

-

19.0

-

dBm

f = 4400 MHz

-

10.0

-

dB

input return loss

f = 5000 MHz

-

6.0

-

dB

f = 4400 MHz

-

22.0

-

dB

output return loss

f = 5000 MHz

-

21.0

-

dB

between gain mode and bypass mode

f = 4400 MHz

[2] -5.0 -

+5.0 deg

gain phase step variation

f = 5000 MHz

[2] -5.0 -

+5.0 deg

[1]

PCB losses are subtracted.

[2]

Guaranteed by design; not tested in production

BGS8U5

All information provided in this document is subject to legal disclaimers.

© NXP B.V. 2021. All rights reserved.

Product data sheet

Rev. 5 — 1 December 2021

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