SIR698DP datasheet(3/13 Pages) VISHAY

3 / 13 page

Document Number: 67918

S11-2524-Rev. A, 26-Dec-11

www.vishay.com

Vishay Siliconix

SiR698DP

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

01234

VGS = 10 V thru 6 V

5 V

VDS - Drain-to-Source Voltage (V)

4 V

3 V

0.0

0.1

0.2

0.3

0.4

0.5

0246

ID - Drain Current (A)

VGS = 10 V

VGS = 6 V

0123456

VDS = 50 V

ID = 2.5 A

Qg - Total Gate Charge (nC)

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0123456

TC = 125 °C

- 55 °C

25 °C

VGS - Gate-to-Source Voltage (V)

120

160

200

240

280

320

100

VDS - Drain-to-Source Voltage (V)

Crss

Coss

Ciss

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

- 50

- 25

100

125

150

VGS = 10 V

ID = 2.5 A

TJ - Junction Temperature (°C)

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