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LTC4282 Datasheet(PDF) 11 Page - Analog Devices

Part # LTC4282
Description  High Current Hot Swap Controller with Current Monitor Output
PDF  24 Pages
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Manufacturer  AD [Analog Devices]
Direct Link  http://www.analog.com
Logo AD - Analog Devices

LTC4282 Datasheet(HTML) 11 Page - Analog Devices

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LT4239
11
Rev. 0
For more information www.analog.com
APPLICATIONS INFORMATION
Turn-On Sequence
Before the MOSFETs are turned on, the VCC supply must
exceed its 3.6V undervoltage lockout level. The N-Channel
MOSFETs are then turned on in two stages with dual gate
drive to pass the load current. When the input supply
rises above the UV undervoltage threshold set by a R1/
R2 divider, it initiates an internal 25ms debounce delay.
During the debounce cycle, the external MOSFET’s health
is monitored at the MOSFET’s drain and OUTK pin. If the
voltage difference is less than 1.3V indicating a MOSFET’s
drain/source short, FLT will be pulled low at the end of the
debounce cycle. Otherwise, the MOSFET M1 is turned on
first by charging up GATE1 with a 10µA current source from
the charge pump. Concurrently, STMR pin voltage will start
ramping up with a 10µA current source. Connect a capac-
itor from STMR to GND to set the total allowed start-up
time. The voltage at the GATE1 pin rises with a slope equal
to 10µA/CG1 and the inrush current flowing into the load
capacitor CLOAD is limited to (10µA/CG1) • CLOAD.
The OUT voltage follows GATE1 after M1 has reached its
threshold voltage. If too small of CG1 is used, the current
flowing through RS1 may become too high and reach
the current limit, which triggers an internally set 100µs
timer. When the timer expires, the FLT pin pulls low to
indicate a fault condition. With appropriate CG1 selected,
the current can be kept below the current limit allowing
GATE1 to charge up turning on M1. When the gate drive
for M1 exceeds 10V and the voltage difference between
the MOSFET’s drain and the OUTK pin is less than 1V,
GATE2 charges up with a 50µA current source.
As GATE2 rises, M2 turns on when its threshold voltage is
exceeded. When GATE2 is fully on and the voltage between
the MOSFET’s drain and the OUTK pin falls below 100mV,
GATE1 pulls down to OUT turning off M1. The STMR pin is
reset to ground by a 125µA current. A 10ms power-good
timer is initiated while GATE2 continues to charge up until
it is limited by the internal 12V clamp between GATE2 and
OUT. At the end of the timer delay, the PG is released to
pull high to indicate power is good and the load may be
activated. The capacitance value at the STMR pin should
be chosen such that the ramp-up period is long enough
for GATE2 to be started up successfully without STMR
reaching its fault threshold.
20ms/DIV
IINRUSH
2A/DIV
4239 F02
∆VGATE1
10V/DIV
∆VGATE2
10V/DIV
VOUT
10V/DIV
Figure 2. Normal Start-Up Waveforms
Turn-Off Sequence
A normal turn-off is initiated by pulling the UV pin below
its 1.182V threshold (50mV hysteresis). The MOSFETs
are turned off with 10mA currents pulling down the
GATE pins to OUT. Additionally, several fault conditions
can cause turn-off of the GATE pins. These include FET
short and FET-Bad detection as well as an extended over-
current condition either during start-up or after power
good. During output overcurrent fault condition, GATE2
is pulled down to OUT with 50mA. When a severe output
short is detected, either during inrush or normal operation
period, a current source of 130mA or 600mA pulls GATE1
or GATE2, respectively to OUT. If the VCC pin falls below
its 3.6V undervoltage lockout threshold, both GATE1 and
GATE2 pins are also pulled down to the OUT pin with
130mA and 600mA, respectively.
Constant Current Start-Up Using a GATE R-C Network
A R-C network must be used on the trickle MOSFET M1
for start-up. The series resistor and capacitor network
from GATE1 to ground (RG1 and CG1 in Figure 1) limits the
GATE1 slew rate and inrush current to less than the cur-
rent limit. The internal 100µs fault timer will not run since
the current limit is not engaged during start-up, which
allows the use of MOSFET with smaller safe operating
area for M1. RG1 should be chosen such that IGATE1(UP) •
RG1 is less than the MOSFET’s threshold voltage to avoid
a current spike at the beginning of start-up. Using a too
small value for RG1 can degrade the stability of the current
limit circuit. For proper operation, the value of RG1 should
be ≥ 470Ω and CG1 should be ≤ 100nF.



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