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STB270N04 Datasheet(PDF) 3 Page - STMicroelectronics |
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STB270N04 Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 14 page ![]() STB270N04-1 - STB270N04 - STP270N04 Electrical characteristics Rev3 3/14 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. On/off states Symbol Parameter Test Condictions Min. Typ. Max. Unit V(BR)DSS Drain-Source Breakdown Voltage ID = 250µA, VGS= 0 40 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating, VDS = MaxRating @125°C 10 100 µA µA IGSS Gate Body Leakage Current (VDS = 0) VGS = ±20V ± 200 nA VGS(th) Gate Threshold Voltage VDS= VGS, ID = 250µA 24 V RDS(on) Static Drain-Source On Resistance VGS= 10V, ID= 80A TO-220 I²PAK 2.5 2.9 m Ω D²PAK 2.1 2.5 m Ω Table 4. Dynamic Symbol Parameter Test Condictions Min. Typ. Max. Unit gfs (1) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward Transconductance VDS =15V, ID = 80A 200 S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS =25V, f=1 MHz, VGS=0 7400 1800 47 pF pF pF Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD=20V, ID = 160A VGS =10V (see Figure 2) 110 27 25 150 nC nC nC |
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