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LM5106MM Datasheet(PDF) 3 Page - National Semiconductor (TI) |
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LM5106MM Datasheet(HTML) 3 Page - National Semiconductor (TI) |
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3 / 12 page ![]() Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. V DD to VSS –0.3V to +18V HB to HS –0.3V to +18V IN and EN to V SS –0.3V to V DD + 0.3V LO to V SS –0.3V to V DD + 0.3V HO to V SS HS – 0.3V to HB + 0.3V HS to V SS (Note 6) −5V to +100V HB to V SS 118V RDT to V SS –0.3V to 5V Junction Temperature +150˚C Storage Temperature Range –55˚C to +150˚C ESD Rating HBM (Note 2) 1.5 kV Recommended Operating Conditions V DD +8V to +14V HS (Note 6) –1V to 100V HB HS+8VtoHS+14V HS Slew Rate <50V/ns Junction Temperature –40˚C to +125˚C Electrical Characteristics Specifications in standard typeface are for T J = +25˚C, and those in boldface type apply over the full operating junction temperature range. Unless otherwise specified, V DD = HB = 12V, VSS =HS= 0V, EN = 5V. No load on LO or HO. RDT= 100k Ω(Note 4). Symbol Parameter Conditions Min Typ Max Units SUPPLY CURRENTS I DD V DD Quiescent Current IN = EN = 0V 0.34 0.6 mA I DDO V DD Operating Current f = 500 kHz 2.1 3.5 mA I HB Total HB Quiescent Current IN = EN = 0V 0.06 0.2 mA I HBO Total HB Operating Current f = 500 kHz 1.5 3 mA I HBS HB to V SS Current, Quiescent HS = HB = 100V 0.1 10 µA I HBSO HB to V SS Current, Operating f = 500 kHz 0.5 mA INPUT IN and EN V IL Low Level Input Voltage Threshold 0.8 1.8 V V IH High Level Input Voltage Threshold 1.8 2.2 V R pd Input Pulldown Resistance Pin IN and EN 100 200 500 k Ω DEAD-TIME CONTROLS VRDT Nominal Voltage at RDT 2.7 3 3.3 V IRDT RDT Pin Current Limit RDT = 0V 0.75 1.5 2.25 mA UNDER VOLTAGE PROTECTION V DDR V DD Rising Threshold 6.2 6.9 7.6 V V DDH V DD Threshold Hysteresis 0.5 V V HBR HB Rising Threshold 5.9 6.6 7.3 V V HBH HB Threshold Hysteresis 0.4 V LO GATE DRIVER V OLL Low-Level Output Voltage I LO = 100 mA 0.21 0.4 V V OHL High-Level Output Voltage I LO = –100 mA, V OHL =VDD –VLO 0.5 0.85 V I OHL Peak Pullup Current LO = 0V 1.2 A I OLL Peak Pulldown Current LO = 12V 1.8 A HO GATE DRIVER V OLH Low-Level Output Voltage I HO = 100 mA 0.21 0.4 V V OHH High-Level Output Voltage I HO = –100 mA, V OHH =HB – HO 0.5 0.85 V I OHH Peak Pullup Current HO = 0V 1.2 A I OLH Peak Pulldown Current HO = 12V 1.8 A THERMAL RESISTANCE θ JA Junction to Ambient (Note 3), (Note 5) 40 ˚C/W www.national.com 3 |
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