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LM5106MM Datasheet(PDF) 3 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part # LM5106MM
Description  100V Half Bridge Gate Driver with Programmable
PDF  12 Pages
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM5106MM Datasheet(HTML) 3 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
V
DD to VSS
–0.3V to +18V
HB to HS
–0.3V to +18V
IN and EN to V
SS
–0.3V to V
DD + 0.3V
LO to V
SS
–0.3V to V
DD + 0.3V
HO to V
SS
HS – 0.3V to HB + 0.3V
HS to V
SS (Note 6)
−5V to +100V
HB to V
SS
118V
RDT to V
SS
–0.3V to 5V
Junction Temperature
+150˚C
Storage Temperature Range
–55˚C to +150˚C
ESD Rating HBM
(Note 2)
1.5 kV
Recommended Operating
Conditions
V
DD
+8V to +14V
HS (Note 6)
–1V to 100V
HB
HS+8VtoHS+14V
HS Slew Rate
<50V/ns
Junction Temperature
–40˚C to +125˚C
Electrical Characteristics Specifications in standard typeface are for T
J = +25˚C, and those in boldface
type apply over the full operating junction temperature range. Unless otherwise specified, V
DD = HB = 12V, VSS =HS=
0V, EN = 5V. No load on LO or HO. RDT= 100k
Ω(Note 4).
Symbol
Parameter
Conditions
Min
Typ
Max
Units
SUPPLY CURRENTS
I
DD
V
DD Quiescent Current
IN = EN = 0V
0.34
0.6
mA
I
DDO
V
DD Operating Current
f = 500 kHz
2.1
3.5
mA
I
HB
Total HB Quiescent Current
IN = EN = 0V
0.06
0.2
mA
I
HBO
Total HB Operating Current
f = 500 kHz
1.5
3
mA
I
HBS
HB to V
SS Current, Quiescent
HS = HB = 100V
0.1
10
µA
I
HBSO
HB to V
SS Current, Operating
f = 500 kHz
0.5
mA
INPUT IN and EN
V
IL
Low Level Input Voltage Threshold
0.8
1.8
V
V
IH
High Level Input Voltage Threshold
1.8
2.2
V
R
pd
Input Pulldown Resistance Pin IN and EN
100
200
500
k
Ω
DEAD-TIME CONTROLS
VRDT
Nominal Voltage at RDT
2.7
3
3.3
V
IRDT
RDT Pin Current Limit
RDT = 0V
0.75
1.5
2.25
mA
UNDER VOLTAGE PROTECTION
V
DDR
V
DD Rising Threshold
6.2
6.9
7.6
V
V
DDH
V
DD Threshold Hysteresis
0.5
V
V
HBR
HB Rising Threshold
5.9
6.6
7.3
V
V
HBH
HB Threshold Hysteresis
0.4
V
LO GATE DRIVER
V
OLL
Low-Level Output Voltage
I
LO = 100 mA
0.21
0.4
V
V
OHL
High-Level Output Voltage
I
LO = –100 mA,
V
OHL =VDD –VLO
0.5
0.85
V
I
OHL
Peak Pullup Current
LO = 0V
1.2
A
I
OLL
Peak Pulldown Current
LO = 12V
1.8
A
HO GATE DRIVER
V
OLH
Low-Level Output Voltage
I
HO = 100 mA
0.21
0.4
V
V
OHH
High-Level Output Voltage
I
HO = –100 mA,
V
OHH =HB – HO
0.5
0.85
V
I
OHH
Peak Pullup Current
HO = 0V
1.2
A
I
OLH
Peak Pulldown Current
HO = 12V
1.8
A
THERMAL RESISTANCE
θ
JA
Junction to Ambient
(Note 3), (Note 5)
40
˚C/W
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