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SIC431 Datasheet(PDF) 4 Page - Vishay Siliconix |
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SIC431 Datasheet(HTML) 4 Page - Vishay Siliconix |
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4 / 23 page ![]() SiC431 www.vishay.com Vishay Siliconix S18-0866-Rev. D, 27-Aug-2018 4 Document Number: 74589 For technical questions, contact: powerictechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note (1) Guaranteed by design ELECTRICAL SPECIFICATIONS (VIN = 12 V, VEN = 5 V, TJ = -40 °C to +125 °C, unless otherwise stated) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Power Supplies VDD supply VDD VIN = 6 V to 24 V (SiC431A, SiC431B) 4.75 5 5.25 V VDD UVLO threshold, rising VDD_UVLO 3.3 3.6 3.9 VDD UVLO hysteresis VDD_UVLO_HYST -300 - mV Maximum VDD current IDD VIN = 6 V to 24 V 3 - - mA VDRV supply VDRV VIN = 6 V to 24 V (SiC431A, SiC431B) 4.75 5 5.25 V Maximum VDRV current IDRV VIN = 6 V to 24 V 50 - - mA Input current IIN Non-switching, VFB > 0.6 V - 50 120 μA Shutdown current IIN_SHDN VEN = 0 V - 0.5 3 Controller and Timing Feedback voltage VFB TJ = 25 °C 597 600 603 m/V TJ = -40 °C to +125 °C (1) 594 600 606 VFB input bias current IFB -2 - nA Minimum on-time tON_MIN. -50 65 ns tON accuracy tON_ACCURACY -10 - 10 % On-time range tON_RANGE 65 - 2250 ns Minimum frequency, skip mode fSW_MIN. Ultrasonic version (SiC431A, SiC431C) 20 - 30 kHz Power save version (SiC431B, SiC431D) 0 - - Minimum off-time tOFF_MIN. 205 250 305 ns Power MOSFETs High side on resistance RON_HS VDRV = 5 V, TA = 25 °C -6 - m Low side on resistance RON_LS -2 - Fault Protections Over current protection (inductor valley current) IOCP TJ = -10 °C to +125 °C -20 - 20 % Output OVP threshold VOVP VFB with respect to 0.6 V reference -20 - Output UVP threshold VUVP --80 - Over temperature protection TOTP_RISING Rising temperature - 150 - °C TOTP_HYST Hysteresis - 25 - Power Good Power good output threshold VFB_RISING_VTH_OV VFB rising above 0.6 V reference - 20 - % VFB_FALLING_VTH_UV VFB falling below 0.6 V reference - -10 - Power good hysteresis VFB_HYST -40 - mV Power good on resistance RON_PGOOD -7.5 15 Power good delay time tDLY_PGOOD 15 25 35 μs EN / MODE / Ultrasonic Threshold EN logic high level VEN_H 1.6 - - V EN logic low level VEN_L -- 0.4 EN pull down resistance REN -5 - M Switching Frequency MODE1 (switching frequency) RMODE1 fSW = 300 kHz - 51 55 k fSW = 500 kHz 90 100 110 fSW = 750 kHz 180 200 220 fSW = 1000 kHz 450 499 - Soft Start Soft start time tss Connect RMODE2 between MODE2 and AGND 1.8 3 4.2 ms Connect RMODE2 between MODE2 and VDD 3.6 6 8.4 Over Current Protection MODE2 (over current protection) RMODE2 IOCP = 32 A 450 499 - k IOCP = 24.8 A 180 200 220 IOCP = 17.3 A 90 100 110 IOCP = 9.6 A - 51 55 |
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