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SAMWIN
SW50N06
REV2.1
05.07.21
2/6
Electrical Characteristics (Tc=25 unless otherwise noted)
Value
Symbol
Parameter
Test Conditions
Min
Typ
Max
Off Characteristics
BV
DSS
Drain- Source Breakdown VoltageV
GS=0V,ID=250uA
60
-
-V
BV
DSS/
Tj
Breakdown Voltage Temperature
coefficient
I
D=250uA,referenced to 25
-
0.07
-
V/
V
DS=60V, VGS=0V
I
DSS
Drain-Source Leakage Current
V
DS=48V, Tc=125
-
-
1
uA
Gate-Source Leakage Current
V
GS=20V,VDS=0V
-
-
100
nA
Gate-Source Leakage Reverse
V
GS=-20V, VDS=0V
-
-
-100
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS=VGS,ID=250uA
2.0
-
4.0V
R
DS(ON)
Static Drain-Source On-state
Resistance
V
GS=10V,ID=25A
-
0.018
0.023
ohm
Dynamic Characteristics
Ciss
Input Capacitance
-
900
1220
Coss
Output Capacitance
-
430
550
Crss
Reverse Transfer Capacitance
-
80
100
Dynamic Characteristics
t
d(on)
Turn-on Delay Time
-
40
60
t
r
Rise Time
-
100
200
t
d(off)
Turn-off Delay Time
-
90
180
t
f
Fall Time
-
80
160
Q
g
Total Gate Charge
-
30
40
Q
gs
Gate-Source Charge
-
9.6-
Q
gd
Gate-Drain Charge (Miller Charge)
-
10-
nc
V
DS=48V,VGS=10V, ID=50A
(Note4,5)
ns
V
DD=30V,ID=25A
R
G=50ohm
(Note4,5)
pF
V
GS=0V,VDS=25V, f=1MHz
I
GSS
Units
Source-Drain Diode Ratings and Characteristics
uc
-
81
-
Reverse Recovery Charge
Q
rr
ns
-
54
-
I
S=50A,VGS=0V,
dI
F/dt=100A/us
Reverse Recovery Time
t
rr
V
1.5
-
-
I
S=50A,VGS=0V
Diode Forward Voltage
V
SD
200
-
-
Pulsed Source Current
I
SM
A
50
-
-
Integral Reverse
p-n Junction Diode
in the MOSFET
Continuous Source Current
I
S
Unit.
Max.
Typ.
Min.
Test Conditions
Parameter
Symbol
NOTES
1. Repeativity rating: pulse width limited by junction temperature
2. L=5.6mH,I
AS=50A,VDD=25V,RG=0ohm, Starting TJ=25
3. ISD
50A,di/dt
300A/us,V
DD
BV
DSS, Starting TJ=25
4. Pulse Test: Pulse Width
300us,Duty Cycle
2%
5. Essentially independent of operating temperature.
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