SAMWIN
SW50N06
REV2.1
05.07.21
Features
N-Channel MOSFET
BV
DSS (Minimum)
R
DS(ON) (Maximum)
I
D
Qg (Typical)
P
D (@TC=25
)
General Description
This power MOSFET is produced in CHMC with
advanced VDMOS process, planar stripe. This
technology enable power MOSFET to have better
characteristics, such as fast switching time, low on
resistance, low gate charge and especially excellent
avalanche characteristics. It is mainly suitable for half
bridge or full bridge resonant topology like a electronic
ballast, and also low power switching mode power
appliances.
Absolute Maximum Ratings
Symbol
Parameter
Value
Units
V
DSS
Drain to Source Voltage
60
V
Continuous Drain Current (@Tc=25
)
50
A
Continuous Drain Current (@Tc=100
)
35
A
I
DM
Drain Current Pulsed
(Note 1)
200
A
V
GS
Gate to Source Voltage
±20
V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
480
mJ
E
AR
Repetitive Avalanche Energy
(Note 1)
13
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
7
V/ns
Total Power Dissipation (@Tc=25
)
130
W
Derating Factor above 25
0.9
W/
T
STG,TJ
Operating junction temperature &Storage temperature
-55 ~ +150
T
L
Maximum Lead Temperature for soldering purpose, 1/8 from Case
for 5 seconds.
300
P
D
I
D
Thermal Characteristics
/ W
62.5
-
-
Thermal Resistance, Junction-to-Ambient
R
JA
/ W
-
0.5
-
Thermal Resistance, Case-to-Sink
R
CS
/ W
1.15
-
-
Thermal Resistance, Junction-to-Case
R
JC
Max
Typ
Min
Units
Value
Parameter
Symbol
1/6
: 60V
: 0.023ohm
: 50 A
: 30 nc
: 130W
G
S
D
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