SI9933CDY datasheet(4/9 Pages) VISHAY

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Si9933CDY

www.vishay.com

Vishay Siliconix

S-81729-Rev. A, 04-Aug-08

Document Number: 68791

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Source-Drain Diode Forward Voltage

Threshold Voltage

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

Safe Operating Area, Junction-to-Ambient

0.1

100

0.0

0.2

0.4

0.6

0.8

1.0

1.2

TJ = 150 °C

VSD - Source-to-Drain Voltage (V)

TJ = 25 °C

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

- 50

- 25

100

125

150

ID =250 µA

TJ - Temperature (°C)

0.02

0.04

0.06

0.08

0246

VGS - Gate-to-Source Voltage (V)

TJ =25 °C

TJ =125 °C

ID = - 4.8 A

00.01

Time (s)

0.1

VDS - Drain-to-Source Voltage (V)

*VGS > minimum VGS at which RDS(on) is specified

100

0.1

100

0.01

0.1

TA =25 °C

Single Pulse

10 s

Limited by RDS(on)*

BVDSS Limited

10 ms

1ms

100 ms

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