Si9933CDY

www.vishay.com

Vishay Siliconix

S-81729-Rev. A, 04-Aug-08

1

Document Number: 68791

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Dual P-Channel 20 V (D-S) MOSFET

FEATURES

• Material categorization:

For definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

•Load switch

•DC/DC converter

Notes

b. Surface mounted on 1" x 1" FR4 board

c. t = 10 s

d. Maximum under steady state conditions is 110 °C/W

e. Package limited

PRODUCT SUMMARY

-20

0.058

0.094

8

-4

Configuration

Dual

Top View

SO-8 Dual

1

S

1

2

G

1

3

S

2

1

2

G

3

S

2

4

G

2

D

1

7

D

2

6

D

2

5

D

1

8

Available

P-Channel

MOSFET

P-Channel

MOSFET

ORDERING INFORMATION

Package

SO-8

Lead (Pb)-free

Si9933CDY-T1-E3

Lead (Pb)-free and halogen-free

Si9933CDY-T1-GE3

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

-20

V

Gate-source voltage

± 12

A

Pulsed drain current (10 μs pulse width)

-20

Source-drain current diode current

-2.5

Single pulse avalanche current

L = 0.1 mH

-6

Single-pulse avalanche energy

1.8

mJ

Maximum power dissipation

3.1

W

2

Operating junction and storage temperature range

-50 to +150

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

LIMIT

UNIT

TYPICAL

MAXIMUM

t

 10 s

52

62.5

°C/W

Maximum junction-to-foot (drain)

Steady state

32

40