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IRF7422D2 Datasheet(PDF) 2 Page - International Rectifier |
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IRF7422D2 Datasheet(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRF7422D2 2 www.irf.com Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -20 ––– ––– VVGS = 0V, ID = -250µA ––– 0.07 0.09 VGS = -4.5V, ID = -2.2A ––– 0.115 0.14 VGS = -2.7V, ID = -1.8A VGS(th) Gate Threshold Voltage -0.70 ––– ––– VVDS = VGS, ID = -250µA gfs Forward Transconductance 4.0 ––– ––– SVDS = -16V, ID = -2.2A ––– ––– -1.0 VDS = -16V, VGS = 0V ––– ––– -25 VDS = -16V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V Qg Total Gate Charge ––– 15 22 ID = -2.2A Qgs Gate-to-Source Charge ––– 2.2 3.3 nC VDS = -16V Qgd Gate-to-Drain ("Miller") Charge ––– 6.0 9.0 VGS = -4.5V, See Fig. 6 and 9 td(on) Turn-On Delay Time ––– 8.4 ––– VDD = -10V tr Rise Time ––– 26 ––– ID = -2.2A td(off) Turn-Off Delay Time ––– 51 ––– RG = 6.0Ω tf Fall Time ––– 33 ––– RD = 4.5Ω, See Fig. 10 Ciss Input Capacitance ––– 610 ––– VGS = 0V Coss Output Capacitance ––– 310 ––– pF VDS = -15V Crss Reverse Transfer Capacitance ––– 170 ––– ƒ = 1.0MHz, See Fig. 5 MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IDSS Drain-to-Source Leakage Current IGSS Ω µA nA ns RDS(on) Static Drain-to-Source On-Resistance Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current(Body Diode) ––– ––– -2.5 ISM Pulsed Source Current (Body Diode) ––– ––– -17 VSD Body Diode Forward Voltage ––– ––– -1.0 V TJ = 25°C, IS = -1.8A, VGS = 0V trr Reverse Recovery Time (Body Diode) ––– 56 84 ns TJ = 25°C, IF = -2.2A Qrr Reverse RecoveryCharge ––– 71 110 nC di/dt = -100A/µs A MOSFET Source-Drain Ratings and Characteristics Parameter Max. Units Conditions If (av) Max. Average Forward Current 2.8 50% Duty Cycle. Rectangular Wave, Tc = 25°C 1.8 50% Duty Cycle. Rectangular Wave, Tc = 70°C ISM Max. peak one cycle Non-repetitive 200 5µs sine or 3µs Rect. pulse Following any rated Surge current 20 10ms sine or 6ms Rect. pulse load condition & with Vrrm applied A Schottky Diode Maximum Ratings A Parameter Max. Units Conditions Vfm Max. Forward voltage drop 0.57 If = 3.0, Tj = 25°C 0.77 If = 6.0, Tj = 25°C 0.52 If = 3.0, Tj = 125°C 0.79 If = 6.0, Tj = 125°C. Irm Max. Reverse Leakage current 0.13 Vr = 20V Tj = 25°C 18 Tj = 125°C Ct Max. Junction Capacitance 310 pF Vr = 5Vdc ( 100kHz to 1 MHz) 25°C dv/dt Max. Voltage Rate of Charge 4900 V/µs Rated Vr Schottky Diode Electrical Specifications V mA ( HEXFET is the reg. TM for International Rectifier Power MOSFET's ) |
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